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Growth kinetics of GaAs nanoneedles on silicon and sapphire substrates Journal article
Dubrovskii V.G., Nazarenko M.V., Chuang L.C., Ko W.S., Ng K.W., Chang-Hasnain C.. Growth kinetics of GaAs nanoneedles on silicon and sapphire substrates[J]. Applied Physics Letters, 2011, 98(15).
Authors:  Dubrovskii V.G.;  Nazarenko M.V.;  Chuang L.C.;  Ko W.S.;  Ng K.W.; et al.
Favorite | TC[WOS]:6 TC[Scopus]:6 | Submit date:2019/04/08
GaAs nanoneedles grown on sapphire Journal article
Chuang L.C., Moewe M., Ng K.W., Tran T.-T.D., Crankshaw S., Chen R., Ko W.S., Chang-Hasnain C.. GaAs nanoneedles grown on sapphire[J]. Applied Physics Letters, 2011, 98(12).
Authors:  Chuang L.C.;  Moewe M.;  Ng K.W.;  Tran T.-T.D.;  Crankshaw S.; et al.
Favorite | TC[WOS]:35 TC[Scopus]:41 | Submit date:2019/04/08
Nanolasers grown on silicon Journal article
Chen R., Tran T.-T.D., Ng K.W., Ko W.S., Chuang L.C., Sedgwick F.G., Chang-Hasnain C.. Nanolasers grown on silicon[J]. Nature Photonics, 2011, 5(3), 170-175.
Authors:  Chen R.;  Tran T.-T.D.;  Ng K.W.;  Ko W.S.;  Chuang L.C.; et al.
Favorite | TC[WOS]:447 TC[Scopus]:471 | Submit date:2019/04/08
GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate Journal article
Chuang L.C., Sedgwick F.G., Chen R., Ko W.S., Moewe M., Ng K.W., Tran T.-T.D., Chang-Hasnain C.. GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate[J]. Nano Letters, 2011, 11(2), 385-390.
Authors:  Chuang L.C.;  Sedgwick F.G.;  Chen R.;  Ko W.S.;  Moewe M.; et al.
Favorite | TC[WOS]:92 TC[Scopus]:102 | Submit date:2019/04/08
Apd  Cmos Compatible  Iii-v On Si  Led  Nanoneedle  Nanowire  
Single crystalline gaas nanoneedles grown on 46% lattice-mismatched sapphire with bright luminescence Conference paper
Chuang L.C., Ng K.W., Tran T.-T.D., Ko W.S., Moewe M., Crankshaw S., Chen R., Chang-Hasnain C.. Single crystalline gaas nanoneedles grown on 46% lattice-mismatched sapphire with bright luminescence[C], 2010.
Authors:  Chuang L.C.;  Ng K.W.;  Tran T.-T.D.;  Ko W.S.;  Moewe M.; et al.
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InGaAs QW nanopillar light emitting diodes monolithically grown on a Si substrate Conference paper
Chuang L.C., Chen R., Sedgwick F., Ko W.S., Ng K.W., Tran T.-T.D., Chang-Hasnain C.. InGaAs QW nanopillar light emitting diodes monolithically grown on a Si substrate[C], 2010.
Authors:  Chuang L.C.;  Chen R.;  Sedgwick F.;  Ko W.S.;  Ng K.W.; et al.
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As-grown InGaAs nanolasers for integrated silicon photonics Conference paper
Chen R., Tran T.T.D., Ng K.W., Ko W.S., Chuang L.C., Sedgwick F.G., Chang-Hasnain C.. As-grown InGaAs nanolasers for integrated silicon photonics[C], 2010.
Authors:  Chen R.;  Tran T.T.D.;  Ng K.W.;  Ko W.S.;  Chuang L.C.; et al.
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Nanolasers grown on polycrystalline silicon Conference paper
Ng K.W., Ko W.S., Chen R., Tran T.-T.D., Lu F., Chuang L.C., Sedgwick F.G., Chang-Hasnain C.. Nanolasers grown on polycrystalline silicon[C], 2010, 78-79.
Authors:  Ng K.W.;  Ko W.S.;  Chen R.;  Tran T.-T.D.;  Lu F.; et al.
Favorite | TC[WOS]:1 TC[Scopus]:2 | Submit date:2019/04/08
All-semiconductor nanolasers on silicon Conference paper
Chen R., Tran T.-T.D., Ng K.W., Ko W.S., Chuang L.C., Sedgwick F.G., Chang-Hasnain C.. All-semiconductor nanolasers on silicon[C], 2010, 473-474.
Authors:  Chen R.;  Tran T.-T.D.;  Ng K.W.;  Ko W.S.;  Chuang L.C.; et al.
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Single crystalline GaAs nanoneedles grown on 46% lattice-mismatched sapphire with bright luminescence Conference paper
Chuang L.C., Ng K.W., Tran T.-T.D., Ko W.S., Moewe M., Crankshaw S., Chen R., Chang-Hasnain C.. Single crystalline GaAs nanoneedles grown on 46% lattice-mismatched sapphire with bright luminescence[C], 2010.
Authors:  Chuang L.C.;  Ng K.W.;  Tran T.-T.D.;  Ko W.S.;  Moewe M.; et al.
Favorite |  | Submit date:2019/04/08