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GaAs nanoneedles grown on sapphire
Chuang L.C.; Moewe M.; Ng K.W.; Tran T.-T.D.; Crankshaw S.; Chen R.; Ko W.S.; Chang-Hasnain C.
2011-03-21
Source PublicationApplied Physics Letters
ISSN00036951
Volume98Issue:12
Abstract

Heterogeneous integration of dissimilar single crystals is of intense research interests. Lattice mismatch has been the most challenging bottleneck which limits the growth of sufficient active volume for functional devices. Here, we report self-assembled, catalyst-free, single crystalline GaAs nanoneedles grown on sapphire substrates with 46% lattice mismatch. The GaAs nanoneedles have a 2-3 nm tip, single wurtzite phase, excellent optical quality, and dimensions scalable with growth time. The needles have the same sharp, hexagonal pyramid shape from ∼100 nm (1.5 min growth) to ∼9 μm length (3 h growth). © 2011 American Institute of Physics.

DOI10.1063/1.3567492
URLView the original
Language英語English
WOS IDWOS:000288808200066
Scopus ID2-s2.0-79953897068
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Citation statistics
Document TypeJournal article
CollectionUniversity of Macau
AffiliationUniversity of California, Berkeley
Recommended Citation
GB/T 7714
Chuang L.C.,Moewe M.,Ng K.W.,et al. GaAs nanoneedles grown on sapphire[J]. Applied Physics Letters, 2011, 98(12).
APA Chuang L.C.., Moewe M.., Ng K.W.., Tran T.-T.D.., Crankshaw S.., Chen R.., Ko W.S.., & Chang-Hasnain C. (2011). GaAs nanoneedles grown on sapphire. Applied Physics Letters, 98(12).
MLA Chuang L.C.,et al."GaAs nanoneedles grown on sapphire".Applied Physics Letters 98.12(2011).
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