Residential College | false |
Status | 已發表Published |
GaAs nanoneedles grown on sapphire | |
Chuang L.C.; Moewe M.; Ng K.W.; Tran T.-T.D.; Crankshaw S.; Chen R.; Ko W.S.; Chang-Hasnain C. | |
2011-03-21 | |
Source Publication | Applied Physics Letters |
ISSN | 00036951 |
Volume | 98Issue:12 |
Abstract | Heterogeneous integration of dissimilar single crystals is of intense research interests. Lattice mismatch has been the most challenging bottleneck which limits the growth of sufficient active volume for functional devices. Here, we report self-assembled, catalyst-free, single crystalline GaAs nanoneedles grown on sapphire substrates with 46% lattice mismatch. The GaAs nanoneedles have a 2-3 nm tip, single wurtzite phase, excellent optical quality, and dimensions scalable with growth time. The needles have the same sharp, hexagonal pyramid shape from ∼100 nm (1.5 min growth) to ∼9 μm length (3 h growth). © 2011 American Institute of Physics. |
DOI | 10.1063/1.3567492 |
URL | View the original |
Language | 英語English |
WOS ID | WOS:000288808200066 |
Scopus ID | 2-s2.0-79953897068 |
Fulltext Access | |
Citation statistics | |
Document Type | Journal article |
Collection | University of Macau |
Affiliation | University of California, Berkeley |
Recommended Citation GB/T 7714 | Chuang L.C.,Moewe M.,Ng K.W.,et al. GaAs nanoneedles grown on sapphire[J]. Applied Physics Letters, 2011, 98(12). |
APA | Chuang L.C.., Moewe M.., Ng K.W.., Tran T.-T.D.., Crankshaw S.., Chen R.., Ko W.S.., & Chang-Hasnain C. (2011). GaAs nanoneedles grown on sapphire. Applied Physics Letters, 98(12). |
MLA | Chuang L.C.,et al."GaAs nanoneedles grown on sapphire".Applied Physics Letters 98.12(2011). |
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