Residential College | false |
Status | 已發表Published |
All-semiconductor nanolasers on silicon | |
Chen R.; Tran T.-T.D.; Ng K.W.; Ko W.S.; Chuang L.C.; Sedgwick F.G.; Chang-Hasnain C. | |
2010-12-01 | |
Conference Name | 23rd Annual Meeting of the IEEE Photonics-Society |
Source Publication | 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 |
Pages | 473-474 |
Conference Date | NOV 07-11, 2010 |
Conference Place | Denver, CO |
Abstract | We realize room-temperature operation of nanolasers using helically-propagating modes supported by InGaAs nanopillars grown on silicon. These cavity modes provide strong optical confinement and feedback despite low index contrast between the nanopillar and silicon substrate. ©2010 IEEE. |
DOI | 10.1109/PHOTONICS.2010.5698966 |
URL | View the original |
Language | 英語English |
WOS ID | WOS:000287997500237 |
Scopus ID | 2-s2.0-79951905285 |
Fulltext Access | |
Citation statistics | |
Document Type | Conference paper |
Collection | University of Macau |
Affiliation | University of California, Berkeley |
Recommended Citation GB/T 7714 | Chen R.,Tran T.-T.D.,Ng K.W.,et al. All-semiconductor nanolasers on silicon[C], 2010, 473-474. |
APA | Chen R.., Tran T.-T.D.., Ng K.W.., Ko W.S.., Chuang L.C.., Sedgwick F.G.., & Chang-Hasnain C. (2010). All-semiconductor nanolasers on silicon. 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010, 473-474. |
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