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All-semiconductor nanolasers on silicon
Chen R.; Tran T.-T.D.; Ng K.W.; Ko W.S.; Chuang L.C.; Sedgwick F.G.; Chang-Hasnain C.
2010-12-01
Conference Name23rd Annual Meeting of the IEEE Photonics-Society
Source Publication2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Pages473-474
Conference DateNOV 07-11, 2010
Conference PlaceDenver, CO
Abstract

We realize room-temperature operation of nanolasers using helically-propagating modes supported by InGaAs nanopillars grown on silicon. These cavity modes provide strong optical confinement and feedback despite low index contrast between the nanopillar and silicon substrate. ©2010 IEEE.

DOI10.1109/PHOTONICS.2010.5698966
URLView the original
Language英語English
WOS IDWOS:000287997500237
Scopus ID2-s2.0-79951905285
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Document TypeConference paper
CollectionUniversity of Macau
AffiliationUniversity of California, Berkeley
Recommended Citation
GB/T 7714
Chen R.,Tran T.-T.D.,Ng K.W.,et al. All-semiconductor nanolasers on silicon[C], 2010, 473-474.
APA Chen R.., Tran T.-T.D.., Ng K.W.., Ko W.S.., Chuang L.C.., Sedgwick F.G.., & Chang-Hasnain C. (2010). All-semiconductor nanolasers on silicon. 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010, 473-474.
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