Residential College | false |
Status | 已發表Published |
Nanolasers grown on polycrystalline silicon | |
Ng K.W.; Ko W.S.; Chen R.; Tran T.-T.D.; Lu F.; Chuang L.C.; Sedgwick F.G.; Chang-Hasnain C. | |
2010-12-01 | |
Conference Name | 23rd Annual Meeting of the IEEE Photonics-Society |
Source Publication | 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 |
Pages | 78-79 |
Conference Date | NOV 07-11, 2010 |
Conference Place | Denver, CO |
Abstract | MOCVD growth of single crystalline GaAs-based nanoneedle/nanopillar lasers on polycrystalline silicon is demonstrated. Superior material quality, high density and light trapping capability make these structures on polysilicon-based substrates attractive for low-cost and high-efficiency photovoltaic applications. ©2010 IEEE. |
DOI | 10.1109/PHOTONICS.2010.5698766 |
URL | View the original |
Language | 英語English |
WOS ID | WOS:000287997500040 |
Scopus ID | 2-s2.0-79951869732 |
Fulltext Access | |
Citation statistics | |
Document Type | Conference paper |
Collection | University of Macau |
Affiliation | University of California, Berkeley |
Recommended Citation GB/T 7714 | Ng K.W.,Ko W.S.,Chen R.,et al. Nanolasers grown on polycrystalline silicon[C], 2010, 78-79. |
APA | Ng K.W.., Ko W.S.., Chen R.., Tran T.-T.D.., Lu F.., Chuang L.C.., Sedgwick F.G.., & Chang-Hasnain C. (2010). Nanolasers grown on polycrystalline silicon. 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010, 78-79. |
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