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Nanolasers grown on polycrystalline silicon
Ng K.W.; Ko W.S.; Chen R.; Tran T.-T.D.; Lu F.; Chuang L.C.; Sedgwick F.G.; Chang-Hasnain C.
2010-12-01
Conference Name23rd Annual Meeting of the IEEE Photonics-Society
Source Publication2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Pages78-79
Conference DateNOV 07-11, 2010
Conference PlaceDenver, CO
Abstract

MOCVD growth of single crystalline GaAs-based nanoneedle/nanopillar lasers on polycrystalline silicon is demonstrated. Superior material quality, high density and light trapping capability make these structures on polysilicon-based substrates attractive for low-cost and high-efficiency photovoltaic applications. ©2010 IEEE.

DOI10.1109/PHOTONICS.2010.5698766
URLView the original
Language英語English
WOS IDWOS:000287997500040
Scopus ID2-s2.0-79951869732
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Citation statistics
Document TypeConference paper
CollectionUniversity of Macau
AffiliationUniversity of California, Berkeley
Recommended Citation
GB/T 7714
Ng K.W.,Ko W.S.,Chen R.,et al. Nanolasers grown on polycrystalline silicon[C], 2010, 78-79.
APA Ng K.W.., Ko W.S.., Chen R.., Tran T.-T.D.., Lu F.., Chuang L.C.., Sedgwick F.G.., & Chang-Hasnain C. (2010). Nanolasers grown on polycrystalline silicon. 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010, 78-79.
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