| Status | 已發表Published |
| Single crystalline GaAs nanoneedles grown on 46% lattice-mismatched sapphire with bright luminescence | |
| Chuang L.C.; Ng K.W.; Tran T.-T.D.; Ko W.S.; Moewe M.; Crankshaw S.; Chen R.; Chang-Hasnain C. | |
| 2010-10-11 | |
| Source Publication | Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010
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| Abstract | Catalyst-free GaAs nanoneedles are grown on a c-plane sapphire substrate at 400°C using MOCVD. Despite of an extremely large lattice mismatch of 46%, the nanoneedles show single wurtzite-phase and bright room-temperature photoluminescence with narrow linewidths. ©2010 Optical Society of America. |
| URL | View the original |
| Language | 英語English |
| Fulltext Access | |
| Document Type | Conference paper |
| Collection | University of Macau |
| Affiliation | University of California, Berkeley |
| Recommended Citation GB/T 7714 | Chuang L.C.,Ng K.W.,Tran T.-T.D.,et al. Single crystalline GaAs nanoneedles grown on 46% lattice-mismatched sapphire with bright luminescence[C], 2010. |
| APA | Chuang L.C.., Ng K.W.., Tran T.-T.D.., Ko W.S.., Moewe M.., Crankshaw S.., Chen R.., & Chang-Hasnain C. (2010). Single crystalline GaAs nanoneedles grown on 46% lattice-mismatched sapphire with bright luminescence. Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010. |
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