English | 繁體

Search in the results

UM

Browse/Search Results:  1-10 of 15 Help

Selected(0)Clear Items/Page:    Sort:
Analysis and Design of a 21.2-to-25.5-GHz Triple-Coil Transformer-Coupled QVCO Journal article
Zhao, Ya, Fan, Chao, Yin, Jun, Mak, Pui In, Geng, Li. Analysis and Design of a 21.2-to-25.5-GHz Triple-Coil Transformer-Coupled QVCO[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2024, 71(10), 4538-4549.
Authors:  Zhao, Ya;  Fan, Chao;  Yin, Jun;  Mak, Pui In;  Geng, Li
Favorite | TC[WOS]:0 TC[Scopus]:0  IF:5.2/4.5 | Submit date：2024/11/05
Quadrature Voltage-controlled Oscillator (Qvco)  Phase Noise  Quadrature Phase Accuracy  Triple-coil  Transformer-coupled  Determinate Correlation  Bimodal Ambiguity  Tradeoff  Active Coupling Transistor  Alleviate  
A 0.32 × 0.12 mm2 Cryogenic BiCMOS 0.1–8.8 GHz Low Noise Amplifier Achieving 4 K Noise Temperature for SNWD Readout Journal article
Peng, Yatao, Benserhir, Jad, Castaneda, Mario, Fognini, Andreas, Bruschini, Claudio, Charbon, Edoardo. A 0.32 × 0.12 mm2 Cryogenic BiCMOS 0.1–8.8 GHz Low Noise Amplifier Achieving 4 K Noise Temperature for SNWD Readout[J]. IEEE Transactions on Microwave Theory and Techniques, 2024, 72(4), 2179-2192.
Authors:  Peng, Yatao;  Benserhir, Jad;  Castaneda, Mario;  Fognini, Andreas;  Bruschini, Claudio; et al.
Favorite | TC[WOS]:3 TC[Scopus]:3  IF:4.1/4.2 | Submit date：2024/05/02
Bicmos  Cryogenic Temperatures  Low-noise Amplifiers  Sige Heterojunction Bipolar Transistor (Hbt)  Superconducting Single-photon Detectors  Timing Jitter  
LaOMS2 (M = Ti, V, and Cr): novel crystal spin valves without contact Journal article
Bai, Haoyun, Liu, Di, Pan, Hui. LaOMS2 (M = Ti, V, and Cr): novel crystal spin valves without contact[J]. Materials Horizons, 2023, 10(11), 5126-5132.
Authors:  Bai, Haoyun;  Liu, Di;  Pan, Hui
Favorite | TC[WOS]:1 TC[Scopus]:1  IF:12.2/12.5 | Submit date：2024/01/10
Field-effect Transistor  Graphene  Mos2  
Electronic and Optoelectronic Monolayer WSe2 Devices via Transfer-Free Fabrication Method Journal article
Wang,Zixuan, Nie,Yecheng, Ou,Haohui, Chen,Dao, Cen,Yingqian, Liu,Jidong, Wu,Di, Hong,Guo, Li,Benxuan, Xing,Guichuan, Zhang,Wenjing. Electronic and Optoelectronic Monolayer WSe2 Devices via Transfer-Free Fabrication Method[J]. Nanomaterials, 2023, 13(8), 1368.
Authors:  Wang,Zixuan;  Nie,Yecheng;  Ou,Haohui;  Chen,Dao;  Cen,Yingqian; et al.
Favorite | TC[WOS]:4 TC[Scopus]:4  IF:4.4/4.7 | Submit date：2023/08/03
Chemical Vapor Deposition  Monolayer Wse2  Photodetector  Transfer-free  Transistor  
A 90- to 115-GHz superheterodyne receiver front-end for W-band imaging system in 28-nm complementary metal-oxide-semiconductor Journal article
Wang, Xi, Wei, Dong, Zhang, Zhiyang, Wu, Tianxiang, Chen, Xu, Chen, Yong, Ren, Junyan, Ma, Shunli. A 90- to 115-GHz superheterodyne receiver front-end for W-band imaging system in 28-nm complementary metal-oxide-semiconductor[J]. International Journal of Circuit Theory and Applications, 2023, 51(4), 1530-1547.
Authors:  Wang, Xi;  Wei, Dong;  Zhang, Zhiyang;  Wu, Tianxiang;  Chen, Xu; et al.
Favorite | TC[WOS]:1 TC[Scopus]:1  IF:1.8/1.7 | Submit date：2023/01/30
Imaging System  Low-noise Amplifier (Lna)  Peak-staggered Matching Technique  Superheterodyne Receiver (Rx)  Symmetrical-layout Mixer  Transistor-layout Optimization  W-band  Wideband  
Dual-Gate All-Electrical Valleytronic Transistors Journal article
Lai, Shen, Zhang, Zhaowei, Wang, Naizhou, Rasmita, Abdullah, Deng, Ya, Liu, Zheng, Gao, Wei Bo. Dual-Gate All-Electrical Valleytronic Transistors[J]. Nano Letters, 2023, 23(1), 192-197.
Authors:  Lai, Shen;  Zhang, Zhaowei;  Wang, Naizhou;  Rasmita, Abdullah;  Deng, Ya; et al.
Favorite | TC[WOS]:11 TC[Scopus]:11  IF:9.6/10.1 | Submit date：2023/02/08
"valley On-off" Ratios  All-electrical  Valley Degree Of Freedom  Valleytronic Transistor  
On Low-Leakage CMOS Switches Conference paper
Bo Wang, Shiwei Wang, Man-Kay Law. On Low-Leakage CMOS Switches[C], 2021, 571-574.
Authors:  Bo Wang;  Shiwei Wang;  Man-Kay Law
Favorite | TC[WOS]:7 TC[Scopus]:2 | Submit date：2021/12/08
Cmos Switch  Low-leakage Cmos Switch  Cmos Switch Array  Transistor Leakage Compensation  
A sub-6g sp32t single-chip switch with nanosecond switching speed for 5g applications in 0.25 µm gaas technology Journal article
Tianxiang Wu, Jipeng Wei, Hongquan Liu, Shunli Ma, Yong Chen, Junyan Ren. A sub-6g sp32t single-chip switch with nanosecond switching speed for 5g applications in 0.25 µm gaas technology[J]. Electronics (Switzerland), 2021, 10(12).
Authors:  Tianxiang Wu;  Jipeng Wei;  Hongquan Liu;  Shunli Ma;  Yong Chen; et al.
Favorite | TC[WOS]:9 TC[Scopus]:9  IF:2.6/2.6 | Submit date：2021/10/28
Gaas Process  Pseudomorphic High-electron-mobility Transistor (Phemt)  Single-pole 32-throw (Sp32t) Switch  Sub-6g  
A 10MHz Buck Converter with Type-III Control and Transient Enhancement Transistor Conference paper
Zhao,Shuangxing, Lu,Yan, Zhan,Chenchang, Martins,Rui P.. A 10MHz Buck Converter with Type-III Control and Transient Enhancement Transistor[C], 2020, 43-44.
Authors:  Zhao,Shuangxing;  Lu,Yan;  Zhan,Chenchang;  Martins,Rui P.
Favorite | TC[Scopus]:0 | Submit date：2021/03/04
Buck Converter  Fast Transient  Transient Enhanced Transistor  
Piecewise BJT process spread compensation exploiting base recombination current Conference paper
Sun, Dapeng, Law, Man-Kay, Wang, Bo, Mak, Pui-In, Martins, Rui P.. Piecewise BJT process spread compensation exploiting base recombination current[C], 2017, 890-893.
Authors:  Sun, Dapeng;  Law, Man-Kay;  Wang, Bo;  Mak, Pui-In;  Martins, Rui P.
Favorite | TC[WOS]:0 TC[Scopus]:2 | Submit date：2019/02/11
Bipolar Junction Transistor (Bjt)  Piecewise Process Spread Compensation  Base Recombination Current