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A 0.32 × 0.12 mm2 Cryogenic BiCMOS 0.1–8.8 GHz Low Noise Amplifier Achieving 4 K Noise Temperature for SNWD Readout
Peng, Yatao1; Benserhir, Jad2; Castaneda, Mario3; Fognini, Andreas3; Bruschini, Claudio2; Charbon, Edoardo2
2024-02-06
Source PublicationIEEE Transactions on Microwave Theory and Techniques
ISSN0018-9480
Volume72Issue:4Pages:2179-2192
Abstract

A significant number of cryogenic low-noise amplifiers (cryo-LNAs) are required for the readout of superconducting nanowire detector (SNWD) arrays. It is desirable to have compact cryo-LNAs in place so that the size of the readout circuitry for the SNWD array can be reduced. In this study, we first examined the bandwidth, linearity, and noise requirements of the cryo-LNA for SNWD readout. After that, the design and implementation of a wideband silicon–germanium (SiGe) BiCMOS cryo-LNA were described in detail. The LNA features two cascode stages with resistive shunt–shunt feedback for wideband input impedance matching. The capacitive peaking techniques and emitter inductive degeneration via a slab inductor were utilized to increase the bandwidth without compromising the layout’s compactness. To ensure the amplifier works well at cryogenic temperatures, we modified the model parameters from the foundry-provided models based on the device’s reported cryogenic test data. The measurement results at 3.6 K demonstrate that the cryo-LNA, occupying a core size of only 0.03 mm, achieves a noise-equivalent temperature (NET) of 4–10 K and an average gain of 30.5 dB in the frequency band from 0.1 to 8.8 GHz, under a power consumption of 8.2 mW. We successfully integrated this LNA with a quantum sensor array on a printed circuit board (PCB) and obtained favorable test results, demonstrating the potential application of LNAs for reading large-scale SNWDs.

KeywordBicmos Cryogenic Temperatures Low-noise Amplifiers Sige Heterojunction Bipolar Transistor (Hbt) Superconducting Single-photon Detectors Timing Jitter
DOI10.1109/TMTT.2024.3354828
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaEngineering
WOS SubjectEngineering, Electrical & Electronic
WOS IDWOS:001159139400001
PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141
Scopus ID2-s2.0-85184813183
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Citation statistics
Document TypeJournal article
CollectionFaculty of Science and Technology
THE STATE KEY LABORATORY OF ANALOG AND MIXED-SIGNAL VLSI (UNIVERSITY OF MACAU)
INSTITUTE OF MICROELECTRONICS
Corresponding AuthorPeng, Yatao; Benserhir, Jad
Affiliation1.The State-Key Laboratory of Analog and Mixed-Signal VLSI, The Faculty of Science and Technology, University of Macau, Macao
2.The Advanced Quantum Architecture Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel, 2002, Switzerland
3.The Single Quantum B.V., Delft, 2629 JD, Netherlands
First Author AffilicationFaculty of Science and Technology
Corresponding Author AffilicationFaculty of Science and Technology
Recommended Citation
GB/T 7714
Peng, Yatao,Benserhir, Jad,Castaneda, Mario,et al. A 0.32 × 0.12 mm2 Cryogenic BiCMOS 0.1–8.8 GHz Low Noise Amplifier Achieving 4 K Noise Temperature for SNWD Readout[J]. IEEE Transactions on Microwave Theory and Techniques, 2024, 72(4), 2179-2192.
APA Peng, Yatao., Benserhir, Jad., Castaneda, Mario., Fognini, Andreas., Bruschini, Claudio., & Charbon, Edoardo (2024). A 0.32 × 0.12 mm2 Cryogenic BiCMOS 0.1–8.8 GHz Low Noise Amplifier Achieving 4 K Noise Temperature for SNWD Readout. IEEE Transactions on Microwave Theory and Techniques, 72(4), 2179-2192.
MLA Peng, Yatao,et al."A 0.32 × 0.12 mm2 Cryogenic BiCMOS 0.1–8.8 GHz Low Noise Amplifier Achieving 4 K Noise Temperature for SNWD Readout".IEEE Transactions on Microwave Theory and Techniques 72.4(2024):2179-2192.
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