Residential College | false |
Status | 已發表Published |
A 90- to 115-GHz superheterodyne receiver front-end for W-band imaging system in 28-nm complementary metal-oxide-semiconductor | |
Wang, Xi1; Wei, Dong1; Zhang, Zhiyang1; Wu, Tianxiang1; Chen, Xu1; Chen, Yong2; Ren, Junyan1; Ma, Shunli1 | |
2023-04 | |
Source Publication | International Journal of Circuit Theory and Applications |
ISSN | 0098-9886 |
Volume | 51Issue:4Pages:1530-1547 |
Abstract | In this paper, a broadband superheterodyne receiver (RX) front-end for millimeter-wave (mm-Wave) imaging radar is presented. Realized in 28-nm CMOS technology, the proposed RX incorporates a wideband low-noise amplifier (LNA), double-balanced passive mixers for the dual down-conversion, a differential power divider, a differential intermediate frequency filters, a current-mode-logic divider-by-2, and a local oscillator buffers. Wideband technique and layout optimization are taken into consideration in the RX. A four-stage LNA is devised to realize the high gain and low noise figure (NF) with a common-gate input stage and three pseudodifferential common-source stages. Optimized transistor layout and capacitor neutralization technique are developed to improve gain and noise performance. Transformer-based matching networks with the peak-staggered technique are adopted in the LNA to achieve a flatter gain response with a wider bandwidth (BW). The passive double-balanced mixers are implemented with a highly symmetrical layout for broadband down-conversion. Simulation results show that the mm-Wave RX front-end exhibits a BW ranging from 90 to 115 GHz. The simulated NF of our RX is 4.7 dB at 86 GHz. With a supply voltage of 1 V, the presented RX consumes 88.2-mW power and occupies a chip size of 1.6 × 0.5 mm including all the testing pads. The proposed RX is suitable for W-band imaging systems. |
Keyword | Imaging System Low-noise Amplifier (Lna) Peak-staggered Matching Technique Superheterodyne Receiver (Rx) Symmetrical-layout Mixer Transistor-layout Optimization W-band Wideband |
DOI | 10.1002/cta.3509 |
URL | View the original |
Indexed By | SCIE |
Language | 英語English |
WOS Research Area | Engineering |
WOS Subject | Engineering, Electrical & Electronic |
WOS ID | WOS:000888088800001 |
Publisher | WILEY, 111 RIVER ST, HOBOKEN 07030-5774, NJ |
Scopus ID | 2-s2.0-85142451221 |
Fulltext Access | |
Citation statistics | |
Document Type | Journal article |
Collection | THE STATE KEY LABORATORY OF ANALOG AND MIXED-SIGNAL VLSI (UNIVERSITY OF MACAU) INSTITUTE OF MICROELECTRONICS |
Corresponding Author | Ren, Junyan; Ma, Shunli |
Affiliation | 1.State-Key Laboratory of ASIC and System, Fudan University, Shanghai, China 2.State-Key Laboratory of Analog and Mixed-Signal VLSI and IME/ECE-FST, University of Macau, Macao |
Recommended Citation GB/T 7714 | Wang, Xi,Wei, Dong,Zhang, Zhiyang,et al. A 90- to 115-GHz superheterodyne receiver front-end for W-band imaging system in 28-nm complementary metal-oxide-semiconductor[J]. International Journal of Circuit Theory and Applications, 2023, 51(4), 1530-1547. |
APA | Wang, Xi., Wei, Dong., Zhang, Zhiyang., Wu, Tianxiang., Chen, Xu., Chen, Yong., Ren, Junyan., & Ma, Shunli (2023). A 90- to 115-GHz superheterodyne receiver front-end for W-band imaging system in 28-nm complementary metal-oxide-semiconductor. International Journal of Circuit Theory and Applications, 51(4), 1530-1547. |
MLA | Wang, Xi,et al."A 90- to 115-GHz superheterodyne receiver front-end for W-band imaging system in 28-nm complementary metal-oxide-semiconductor".International Journal of Circuit Theory and Applications 51.4(2023):1530-1547. |
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