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A 90- to 115-GHz superheterodyne receiver front-end for W-band imaging system in 28-nm complementary metal-oxide-semiconductor
Wang, Xi1; Wei, Dong1; Zhang, Zhiyang1; Wu, Tianxiang1; Chen, Xu1; Chen, Yong2; Ren, Junyan1; Ma, Shunli1
2023-04
Source PublicationInternational Journal of Circuit Theory and Applications
ISSN0098-9886
Volume51Issue:4Pages:1530-1547
Abstract

In this paper, a broadband superheterodyne receiver (RX) front-end for millimeter-wave (mm-Wave) imaging radar is presented. Realized in 28-nm CMOS technology, the proposed RX incorporates a wideband low-noise amplifier (LNA), double-balanced passive mixers for the dual down-conversion, a differential power divider, a differential intermediate frequency filters, a current-mode-logic divider-by-2, and a local oscillator buffers. Wideband technique and layout optimization are taken into consideration in the RX. A four-stage LNA is devised to realize the high gain and low noise figure (NF) with a common-gate input stage and three pseudodifferential common-source stages. Optimized transistor layout and capacitor neutralization technique are developed to improve gain and noise performance. Transformer-based matching networks with the peak-staggered technique are adopted in the LNA to achieve a flatter gain response with a wider bandwidth (BW). The passive double-balanced mixers are implemented with a highly symmetrical layout for broadband down-conversion. Simulation results show that the mm-Wave RX front-end exhibits a BW ranging from 90 to 115 GHz. The simulated NF of our RX is 4.7 dB at 86 GHz. With a supply voltage of 1 V, the presented RX consumes 88.2-mW power and occupies a chip size of 1.6 × 0.5 mm including all the testing pads. The proposed RX is suitable for W-band imaging systems.

KeywordImaging System Low-noise Amplifier (Lna) Peak-staggered Matching Technique Superheterodyne Receiver (Rx) Symmetrical-layout Mixer Transistor-layout Optimization W-band Wideband
DOI10.1002/cta.3509
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaEngineering
WOS SubjectEngineering, Electrical & Electronic
WOS IDWOS:000888088800001
PublisherWILEY, 111 RIVER ST, HOBOKEN 07030-5774, NJ
Scopus ID2-s2.0-85142451221
Fulltext Access
Citation statistics
Document TypeJournal article
CollectionTHE STATE KEY LABORATORY OF ANALOG AND MIXED-SIGNAL VLSI (UNIVERSITY OF MACAU)
INSTITUTE OF MICROELECTRONICS
Corresponding AuthorRen, Junyan; Ma, Shunli
Affiliation1.State-Key Laboratory of ASIC and System, Fudan University, Shanghai, China
2.State-Key Laboratory of Analog and Mixed-Signal VLSI and IME/ECE-FST, University of Macau, Macao
Recommended Citation
GB/T 7714
Wang, Xi,Wei, Dong,Zhang, Zhiyang,et al. A 90- to 115-GHz superheterodyne receiver front-end for W-band imaging system in 28-nm complementary metal-oxide-semiconductor[J]. International Journal of Circuit Theory and Applications, 2023, 51(4), 1530-1547.
APA Wang, Xi., Wei, Dong., Zhang, Zhiyang., Wu, Tianxiang., Chen, Xu., Chen, Yong., Ren, Junyan., & Ma, Shunli (2023). A 90- to 115-GHz superheterodyne receiver front-end for W-band imaging system in 28-nm complementary metal-oxide-semiconductor. International Journal of Circuit Theory and Applications, 51(4), 1530-1547.
MLA Wang, Xi,et al."A 90- to 115-GHz superheterodyne receiver front-end for W-band imaging system in 28-nm complementary metal-oxide-semiconductor".International Journal of Circuit Theory and Applications 51.4(2023):1530-1547.
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