Continuing CMOS process scaling to favor the design of high-performance digital systems has resulted in many issues for precision analog design, and one of which is the detrimental transistor leakage. This paper focuses on the analysis and design of low-leakage switches. Specifically, transistor leak-age mechanisms and the evolution of low-leakage switch design techniques are revisited. Different schemes to achieve transistor channel and body leakage reduction are discussed. In addition, we propose a low-leakage switch that can operate for a wide temperature range. At 200 C, it achieves 130 × and 8 × lower leakage than the transmission gate and the popular analog T-switch, respectively.