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A Single-Stage Bipolar-Output Regulating Rectifier With Negligible Cross-Regulation for Wireless Display Journal article
Huang, Chenyu, Zhan, Chenchang, Bai, Xianglong, Lu, Yan. A Single-Stage Bipolar-Output Regulating Rectifier With Negligible Cross-Regulation for Wireless Display[J]. IEEE Journal of Solid-State Circuits, 2024, 1-12.
Authors:  Huang, Chenyu;  Zhan, Chenchang;  Bai, Xianglong;  Lu, Yan
Favorite | TC[WOS]:0 TC[Scopus]:0  IF:4.6/5.6 | Submit date：2024/07/17
Active Rectifier  Bipolar Output  Dual Output  Positive And Negative Voltages  Pulse Width Modulation  Receiver (Rx)  Rectifiers  Regulation  Series Resonant  Single-stage Regulating Rectifier  Transient Analysis  Transistors  Voltage Control  Wireless Communication  Wireless Power Transfer (Wpt)  
A 0.5V 22.5ppm∘C Bandgap Voltage Reference with Leakage Current Injection for Curvature Correction Journal article
Chon-Fai Lee, Chi-Wa U, Rui P. Martins, Chi-Seng Lam. A 0.5V 22.5ppm∘C Bandgap Voltage Reference with Leakage Current Injection for Curvature Correction[J]. IEEE Transactions on Circuits and Systems II: Express Briefs, 2023, 70(10), 3897 - 3901.
Authors:  Chon-Fai Lee;  Chi-Wa U;  Rui P. Martins;  Chi-Seng Lam
Favorite | TC[WOS]:5 TC[Scopus]:6  IF:4.0/3.7 | Submit date：2023/08/03
Bandgap Voltage Reference  Clocks  Internet Of Things  Internet Of Things  Leakage Current Injection  Leakage Currents  Power Demand  Switched-capacitor Circuits  Temperature Coefficient  Temperature Measurement  Transistors  Voltage  
A 1-A Switching LDO with 40-mV Dropout Voltage and Fast DVS Journal article
Xiangyu Mao, Yan Lu, Rui P. Martins. A 1-A Switching LDO with 40-mV Dropout Voltage and Fast DVS[J]. IEEE Transactions on Circuits and Systems II: Express Briefs, 2023, 70(9), 3454-3458.
Authors:  Xiangyu Mao;  Yan Lu;  Rui P. Martins
Favorite | TC[WOS]:3 TC[Scopus]:3  IF:4.0/3.7 | Submit date：2023/08/03
Bandwidth  Capacitors  Control Systems  Dynamic Voltage Scaling (Dvs)  Fully Integrated Voltage Regulator (Fivr)  Low-dropout Regulator (Ldo)  Power Transistors  Pulse Width Modulation  Pwm Control  Switches  Switching Ldo  Type Iii Compensation  Voltage Control  
A 1.2-A Calibration-Free Hybrid LDO With In-Loop Quantization and Auxiliary Constant Current Control Achieving High Accuracy and Fast DVS Journal article
Xiangyu Mao, Yan Lu, Rui P. Martins. A 1.2-A Calibration-Free Hybrid LDO With In-Loop Quantization and Auxiliary Constant Current Control Achieving High Accuracy and Fast DVS[J]. IEEE Transactions on Circuits and Systems I: Regular Papers, 2022, 69(11), 4443-4452.
Authors:  Xiangyu Mao;  Yan Lu;  Rui P. Martins
Favorite | TC[WOS]:6 TC[Scopus]:8  IF:5.2/4.5 | Submit date：2022/09/09
Calibration  Codes  Digital  Distributed Power Delivery  Dynamic Voltage And Frequency Scaling (Dvfs)  Fully-integrated Voltage Regulator (Fivr)  Hybrid Control  Hybrid Power Systems  Low-dropout Regulator (Ldo)  Power Transistors  Quantization (Signal)  Thermometers  Voltage Control  
A 0.1-V VIN Subthreshold 3-Stage Dual-Branch Charge Pump with 43.4% Peak Power Conversion Efficiency Using Advanced Dynamic Gate-Bias Journal article
Yong, Jack Kee, Ramiah, Harikrishnan, Churchill, Kishore Kumar Pakkirisami, Chong, Gabriel, Mekhilef, Saad, Chen, Yong, Mak, Pui In, Martins, Rui P.. A 0.1-V VIN Subthreshold 3-Stage Dual-Branch Charge Pump with 43.4% Peak Power Conversion Efficiency Using Advanced Dynamic Gate-Bias[J]. IEEE Transactions on Circuits and Systems II: Express Briefs, 2022, 69(9), 3929-3933.
Authors:  Yong, Jack Kee;  Ramiah, Harikrishnan;  Churchill, Kishore Kumar Pakkirisami;  Chong, Gabriel;  Mekhilef, Saad; et al.
Favorite | TC[WOS]:16 TC[Scopus]:17  IF:4.0/3.7 | Submit date：2022/08/05
Cmos  Control Systems  Cross-coupled Charge Pump (Cccp)  Energy Harvesting (Eh)  Logic Gates  Power Conversion Efficiency (Pce)  Switches  Switching Circuits  Transistors  Voltage  Voltage Control  
A 23-pW NMOS-Only Voltage Reference with Optimum Body Selection for Process Compensation Journal article
Kai Yu, Yangrun Zhou, Sizhen Li, Mo Huang. A 23-pW NMOS-Only Voltage Reference with Optimum Body Selection for Process Compensation[J]. IEEE Transactions on Circuits and Systems II: Express Briefs, 2022, 69(11), 4213-4217.
Authors:  Kai Yu;  Yangrun Zhou;  Sizhen Li;  Mo Huang
Favorite | TC[WOS]:13 TC[Scopus]:19  IF:4.0/3.7 | Submit date：2022/08/05
Fitting  Logic Gates  Mosfet  Nmos-only Voltage Reference  Optimum Body Selection  Power Demand  Process Compensation  Threshold Voltage  Transistors  Ultra-low-power  Voltage Measurement  
A Single-Stage Dual-Output Regulating Rectifier With Hysteretic Current-Wave Modulation Journal article
Jie Lin, Yan Lu, Chenchang Zhan, Rui P. Martins. A Single-Stage Dual-Output Regulating Rectifier With Hysteretic Current-Wave Modulation[J]. IEEE Journal of Solid-State Circuits, 2021, 56(9), 2770 - 2780.
Authors:  Jie Lin;  Yan Lu;  Chenchang Zhan;  Rui P. Martins
Favorite | TC[WOS]:22 TC[Scopus]:27  IF:4.6/5.6 | Submit date：2021/09/20
Active Rectifier  Dual-output  Modulation  Power Conversion Efficiency (Pce)  Power Transistors  Receiver  Receivers  Resonant Wireless Power Transfer (Wpt)  Single-stage  Three-level Modulation  Topology  Transistors  Voltage Control  Voltage Regulation.  Wireless Communication  
High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric Journal article
Jiang, Huaxing, Liu, Chao, Ng, Kar Wei, Tang, Chak Wah, Lau, Kei May. High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65(12), 5337-5342.
Authors:  Jiang, Huaxing;  Liu, Chao;  Ng, Kar Wei;  Tang, Chak Wah;  Lau, Kei May
Favorite | TC[WOS]:24 TC[Scopus]:28  IF:2.9/2.9 | Submit date：2019/01/17
Iii-nitride  Gate Dielectric  Leakage  Metal-oxide-semiconductor High Electron Mobility Transistors (Moshemts)  Power  Zro2  
Standard cell library design with voltage scaling and transistor sizing for ultra-low-power biomedical applications Conference paper
Chio-In Ieong, Mingzhong Li, Man-Kay Law, Pui-In Mak, Mang-I Vai, Peng-Un Mak, Feng Wan, Rui P. Martins. Standard cell library design with voltage scaling and transistor sizing for ultra-low-power biomedical applications[C]:IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA, 2013.
Authors:  Chio-In Ieong;  Mingzhong Li;  Man-Kay Law;  Pui-In Mak;  Mang-I Vai; et al.
Favorite | TC[WOS]:1 TC[Scopus]:4 | Submit date：2018/12/24
Transistors  Capacitances  Libraries  Logic Gates  Very Large Scale Integration  Power Demand  Inverter