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A 1-A Switching LDO with 40-mV Dropout Voltage and Fast DVS
Xiangyu Mao1; Yan Lu1; Rui P. Martins1,2
2023-03-14
Source PublicationIEEE Transactions on Circuits and Systems II: Express Briefs
ISSN1549-7747
Volume70Issue:9Pages:3454-3458
Abstract

This brief presents a 1-A fully-integrated switching LDO for digital loads. By using 4-phase 200-MHz pulse-width modulation (PWM), it can significantly reduce the output ripple and allow using a smaller output capacitor. Distinctive from the prior dual-loop structure, we adopt a single feedback loop with a wide bandwidth error amplifier (EA) using a quasi-Type-III compensation to improve the dynamic voltage scaling (DVS) rate and to reduce the transient recovery time. Meanwhile, compared with the prior stacked power transistor architecture, the single-PMOS with auxiliary constant current (ACC) control can reduce by 4-fold the power transistor size, and decreases the driver current by at least 2.5 times. Fabricated in 28-nm bulk CMOS, the proposed LDO measures a 1-A load capability with a 40-mV dropout voltage. Moreover, the measured load regulation is 2.2 mV/A, and the line regulation is 1.8 mV/V. In addition, the regulator obtains a fast DVS speed of 4V/μs and a fast load transient recovery time of <50ns.

KeywordBandwidth Capacitors Control Systems Dynamic Voltage Scaling (Dvs) Fully Integrated Voltage Regulator (Fivr) Low-dropout Regulator (Ldo) Power Transistors Pulse Width Modulation Pwm Control Switches Switching Ldo Type Iii Compensation Voltage Control
DOI10.1109/TCSII.2023.3257023
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaEngineering
WOS SubjectEngineering, Electrical & Electronic
WOS IDWOS:001066636600046
PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC445 HOES LANE, PISCATAWAY, NJ 08855-4141
Scopus ID2-s2.0-85151333689
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Citation statistics
Document TypeJournal article
CollectionFaculty of Science and Technology
Faculty of Arts and Humanities
THE STATE KEY LABORATORY OF ANALOG AND MIXED-SIGNAL VLSI (UNIVERSITY OF MACAU)
INSTITUTE OF MICROELECTRONICS
DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
Corresponding AuthorXiangyu Mao
Affiliation1.State Key Laboratory of Analog and Mixed-Signal VLSI, Institute of Microelectronics, and FST-DECE, University of Macau, Macau, China
2.Instituto Superior Técnico, Universidade de Lisboa, Lisbon, Portugal
First Author AffilicationFaculty of Science and Technology
Corresponding Author AffilicationFaculty of Science and Technology
Recommended Citation
GB/T 7714
Xiangyu Mao,Yan Lu,Rui P. Martins. A 1-A Switching LDO with 40-mV Dropout Voltage and Fast DVS[J]. IEEE Transactions on Circuits and Systems II: Express Briefs, 2023, 70(9), 3454-3458.
APA Xiangyu Mao., Yan Lu., & Rui P. Martins (2023). A 1-A Switching LDO with 40-mV Dropout Voltage and Fast DVS. IEEE Transactions on Circuits and Systems II: Express Briefs, 70(9), 3454-3458.
MLA Xiangyu Mao,et al."A 1-A Switching LDO with 40-mV Dropout Voltage and Fast DVS".IEEE Transactions on Circuits and Systems II: Express Briefs 70.9(2023):3454-3458.
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