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Sub-μW Auto-Calibration Bandgap Voltage Reference with 1σ inaccuracy of ±0.12% within -40 to 120 ℃ Journal article
Chi-Wa U, Man-Kay Law, Rui P. Martins, Chi-Seng Lam. Sub-μW Auto-Calibration Bandgap Voltage Reference with 1σ inaccuracy of ±0.12% within -40 to 120 ℃[J]. IEEE Journal of Solid-State Circuits, 2024, 59(2), 540-550.
Authors:  Chi-Wa U;  Man-Kay Law;  Rui P. Martins;  Chi-Seng Lam
Favorite | TC[WOS]:1 TC[Scopus]:3  IF:4.6/5.6 | Submit date：2023/08/31
Auto-calibration  Bandgap  Process Variation  Voltage Reference  
A 0.5V 22.5ppm∘C Bandgap Voltage Reference with Leakage Current Injection for Curvature Correction Journal article
Chon-Fai Lee, Chi-Wa U, Rui P. Martins, Chi-Seng Lam. A 0.5V 22.5ppm∘C Bandgap Voltage Reference with Leakage Current Injection for Curvature Correction[J]. IEEE Transactions on Circuits and Systems II: Express Briefs, 2023, 70(10), 3897 - 3901.
Authors:  Chon-Fai Lee;  Chi-Wa U;  Rui P. Martins;  Chi-Seng Lam
Favorite | TC[WOS]:4 TC[Scopus]:6  IF:4.0/3.7 | Submit date：2023/08/03
Bandgap Voltage Reference  Clocks  Internet Of Things  Internet Of Things  Leakage Current Injection  Leakage Currents  Power Demand  Switched-capacitor Circuits  Temperature Coefficient  Temperature Measurement  Transistors  Voltage  
A -40∼125∘C 0.4μA Low Noise Bandgap Voltage Reference with 0.8mA Load Driving Capability Using Shared Feedback Resistors Journal article
Zhang, Zhaobo, Zhan, Chenchang, Wang, Lidan, Law, Man Kay. A -40∼125∘C 0.4μA Low Noise Bandgap Voltage Reference with 0.8mA Load Driving Capability Using Shared Feedback Resistors[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2022, 69(10), 4033-4037.
Authors:  Zhang, Zhaobo;  Zhan, Chenchang;  Wang, Lidan;  Law, Man Kay
Favorite | TC[WOS]:14 TC[Scopus]:17  IF:4.0/3.7 | Submit date：2022/08/05
Bandgap Reference (Bgr)  Capacitors  Codes  Low Dropout Regulator (Ldo)  Low Noise  Low Power  Low-cost Internet Of Things (Iot)  Power Supplies  Resistors  Temperature Measurement  Thermal Stability  Two Wafers  Voltage  
Switched-Capacitor Bandgap Voltage Reference for IoT Applications Journal article
U, Chi Wa, Law, Man Kay, Lam, Chi Seng, Martins, Rui P.. Switched-Capacitor Bandgap Voltage Reference for IoT Applications[J]. IEEE Transactions on Circuits and Systems I: Regular Papers, 2022, 69(1), 16-29.
Authors:  U, Chi Wa;  Law, Man Kay;  Lam, Chi Seng;  Martins, Rui P.
Favorite | TC[WOS]:14 TC[Scopus]:17  IF:5.2/4.5 | Submit date：2021/09/20
Bandgap Voltage Reference  Capacitors  Clocks  Integrated Circuit Modeling  Internet Of Things  Low Power  Low Voltage  Power Demand  Resistance  Switched Capacitor Circuits  Temperature Coefficient.  Temperature Distribution  
A -40°C to 125°C, 1.08 ppm/°C, 918 nW Bandgap Voltage Reference with Segmented Curvature Compensation Journal article
Yan, T., U, C. W., Law, M. K., Lam, C. S.. A -40°C to 125°C, 1.08 ppm/°C, 918 nW Bandgap Voltage Reference with Segmented Curvature Compensation[J]. Microelectronics Journal, 2020, 104897-104897.
Authors:  Yan, T.;  U, C. W.;  Law, M. K.;  Lam, C. S.
Favorite |   IF:1.9/1.7 | Submit date：2022/08/12
Bandgap Voltage Reference  Temperature Coefficient (Tc)  Segmented Curvature Compensation  
A 0.5-V supply, 36nW bandgap reference with 42ppm/°C average temperature coefficient within -40°C to 120°C Journal article
U, C.-W., Zeng, W.-L., Law, M. K., Lam, C. S., Martins, R. P.. A 0.5-V supply, 36nW bandgap reference with 42ppm/°C average temperature coefficient within -40°C to 120°C[J]. IEEE Transactions on Circuits and Systems I: Regular Papers, 2020, 67(11), 3656-3669.
Authors:  U, C.-W.;  Zeng, W.-L.;  Law, M. K.;  Lam, C. S.;  Martins, R. P.
Favorite |   IF:5.2/4.5 | Submit date：2022/01/25
Bandgap Voltage Reference  Low Voltage  Low Power  Switched Capacitor Circuits  Temperature Coefficient.  
A 0.5-V Supply, 36 nW Bandgap Reference with 42 ppm/°C Average Temperature Coefficient Within-40 °c to 120 °c Journal article
Chi-Wa U, Wen-Liang Zeng, Man-Kay Law, Chi-Seng Lam, Rui Paulo Martins. A 0.5-V Supply, 36 nW Bandgap Reference with 42 ppm/°C Average Temperature Coefficient Within-40 °c to 120 °c[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2020, 67(11), 3656-3669.
Authors:  Chi-Wa U;  Wen-Liang Zeng;  Man-Kay Law;  Chi-Seng Lam;  Rui Paulo Martins
Favorite | TC[WOS]:32 TC[Scopus]:35  IF:5.2/4.5 | Submit date：2021/03/04
Bandgap Voltage Reference  Low Power  Low Voltage  Switched Capacitor Circuits  Temperature Coefficient  
A −40 ​°C–125 ​°C, 1.08 ​ppm/°C, 918 ​nW bandgap voltage reference with segmented curvature compensation Journal article
Yan,Tianzheng, U,Chi Wa, Law,Man Kay, Lam,Chi Seng. A −40 ​°C–125 ​°C, 1.08 ​ppm/°C, 918 ​nW bandgap voltage reference with segmented curvature compensation[J]. MICROELECTRONICS JOURNAL, 2020, 105, 104897.
Authors:  Yan,Tianzheng;  U,Chi Wa;  Law,Man Kay;  Lam,Chi Seng
Favorite | TC[WOS]:11 TC[Scopus]:12  IF:1.9/1.7 | Submit date：2021/03/11
Bandgap Voltage Reference  Temperature Coefficient (Tc)  Segmented Curvature Compensation  
A 0.18V 382µW Bluetooth Low-Energy (BLE) Receiver Front-End with 1.33nW Sleep Power for Energy-Harvesting Applications in 28nm CMOS Journal article
Haidong Yi, Wei-Han Yu, Pui-In Mak, Jun Yin, Rui P. Martins. A 0.18V 382µW Bluetooth Low-Energy (BLE) Receiver Front-End with 1.33nW Sleep Power for Energy-Harvesting Applications in 28nm CMOS[J]. IEEE Journal of Solid-State Circuits, 2018, 53(6), 1618 - 1627.
Authors:  Haidong Yi;  Wei-Han Yu;  Pui-In Mak;  Jun Yin;  Rui P. Martins
Favorite | TC[WOS]:53 TC[Scopus]:60  IF:4.6/5.6 | Submit date：2019/03/12
Bandgap Reference (Bgr)  Bluetooth Low Energy (Ble)  Charge Pump (Cp)  Class-d Voltage-controlled Oscillator (Vco)  Cmos  Energy Harvesting  Low-noise Amplifier (Lna)  Micropower Manager (Μpm)  Power-gating  Receiver (Rx)  Ultra-low Power (Ulp)  Ultra-low Voltage (Ulv)  
A 0.18-V 382-μ W Bluetooth Low-Energy Receiver Front-End with 1.33-nW Sleep Power for Energy-Harvesting Applications in 28-nm CMOS Journal article
Haidong Yi, Wei-Han Yu, Pui-In Mak, Jun Yin, Rui P. Martins. A 0.18-V 382-μ W Bluetooth Low-Energy Receiver Front-End with 1.33-nW Sleep Power for Energy-Harvesting Applications in 28-nm CMOS[J]. IEEE Journal of Solid-State Circuits, 2018, 53(6), 1618-1627.
Authors:  Haidong Yi;  Wei-Han Yu;  Pui-In Mak;  Jun Yin;  Rui P. Martins
Favorite | TC[WOS]:53 TC[Scopus]:60 | Submit date：2019/02/11
Bandgap Reference (Bgr)  Bluetooth Low Energy (Ble)  Charge Pump (Cp)  Class-d Voltage-controlled Oscillator (Vco)  Cmos  Energy Harvesting  Low-noise Amplifier (Lna)  Micropower Manager (Μpm)  Power-gating  Receiver (Rx)  Ultra-low Power (Ulp)  Ultra-low Voltage (Ulv)