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Domain structure and electrical properties of highly textured PbZr x Ti 1-x O 3 thin films grown on LaNiO 3 -electrode-buffered Si by metalorganic chemical vapor deposition Journal article
Lin C.H., Yen B.M., Kuo H.C., Chen H., Wu T.B., Stillman G.E.. Domain structure and electrical properties of highly textured PbZr x Ti 1-x O 3 thin films grown on LaNiO 3 -electrode-buffered Si by metalorganic chemical vapor deposition[J]. Journal of Materials Research, 2000, 15(1), 115-124.
Authors:  Lin C.H.;  Yen B.M.;  Kuo H.C.;  Chen H.;  Wu T.B.; et al.
Favorite | TC[WOS]:10 TC[Scopus]:9 | Submit date：2019/04/08
Thermal reliability of Pt/Ti/Pt/Au Schottky contact on InP with a GalnP Schottky barrier enhancement layer Conference paper
Kuo H.C., Lin C.H., Moser B.C., Hsia H., Tang Z., Chen H., Feng M., Stillman G.E.. Thermal reliability of Pt/Ti/Pt/Au Schottky contact on InP with a GalnP Schottky barrier enhancement layer[C], 1999, 231-236.
Authors:  Kuo H.C.;  Lin C.H.;  Moser B.C.;  Hsia H.;  Tang Z.; et al.
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Characterization of Pb(ScTa)1-xTixO3 (x<0.3) thin films grown on LaNiO3 coated Si By MOCVD Journal article
Lin C.H., Kuo H.C., Stillman G.E., Chen H.. Characterization of Pb(ScTa)1-xTixO3 (x<0.3) thin films grown on LaNiO3 coated Si By MOCVD[J]. Materials Research Society Symposium - Proceedings, 1999, 541, 679-684.
Authors:  Lin C.H.;  Kuo H.C.;  Stillman G.E.;  Chen H.
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Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy Journal article
Kuo H.C., Thomas S., Norton T.U., Moser B.G., Stillman G.E., Lin C.H., Chen H.. Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy[J]. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1998, 16(3), 1377-1380.
Authors:  Kuo H.C.;  Thomas S.;  Norton T.U.;  Moser B.G.;  Stillman G.E.; et al.
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Characterization of highly textured PZT thin films grown on LaNiO 3 coated Si substrates by MOCVD Conference paper
Lin C.H., Yen B.M., Chen H., Wu T.B., Kuo H.C., Stillman G.E.. Characterization of highly textured PZT thin films grown on LaNiO 3 coated Si substrates by MOCVD[C], 1998, 189-194.
Authors:  Lin C.H.;  Yen B.M.;  Chen H.;  Wu T.B.;  Kuo H.C.; et al.
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GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates Journal article
Sengupta D.K., Fang W., Malin J.I., Li J., Horton T., Curtis A.P., Hsieh K.C., Chuang S.L., Chen H., Feng M., Stillman G.E., Li L., Liu H.C., Bandara K.M.S.V., Gunapala S.D., Wang W.I.. GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates[J]. Applied Physics Letters, 1997, 71(1), 78-80.
Authors:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Li J.;  Horton T.; et al.
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Redshifting of a bound-to-continuum GaAs/AIGaAs quantum-well infrared photodetector response via laser annealing Journal article
Sengupta D.K., Horton T., Fang W., Curtis A., Li J., Chuang S.L., Chen H., Feng M., Stillman G.E., Kar A., Mazumder J., Li L., Liu H.C.. Redshifting of a bound-to-continuum GaAs/AIGaAs quantum-well infrared photodetector response via laser annealing[J]. Applied Physics Letters, 1997, 70(26), 3573-3575.
Authors:  Sengupta D.K.;  Horton T.;  Fang W.;  Curtis A.;  Li J.; et al.
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Growth and characterization of InAs x P 1-x /InP strained multiple quantum wells by gas source molecular beam epitaxy Conference paper
Kuo H.C., Thomas S., Curtis A.P., Stillman G.E., Lin C.H., Chen H.. Growth and characterization of InAs x P 1-x /InP strained multiple quantum wells by gas source molecular beam epitaxy[C], 1997, 153-158.
Authors:  Kuo H.C.;  Thomas S.;  Curtis A.P.;  Stillman G.E.;  Lin C.H.; et al.
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Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors Journal article
Sengupta D.K., Fang W., Malin J.I., Curtis A.P., Horton T., Kuo H.C., Turnbull D., Lin C.H., Li J., Hsieh K.C., Chuang S.L., Adesida I., Feng M., Bishop S.G., Stillman G.E., Gibson J.M., Chen H., Mazumder J., Liu H.C.. Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors[J]. Journal of Electronic Materials, 1997, 26(1), 43-51.
Authors:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Curtis A.P.;  Horton T.; et al.
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Dark Current Characteristics  Multiple Quantum Well Infrared Photodectors (Qwips)  Quantum Efficiency  Rapid Thermal Annealing (Rta)  Red Shift  
Optimization of group v switching times for InGaP/GaAs heterostructures grown by LP-MOCVD Conference paper
Yang Q., Hartmann Q.J., Curtis A.P., Lin C., Ahmari D.A., Scott D., Kuo H.C., Chen H., Stillman G.E.. Optimization of group v switching times for InGaP/GaAs heterostructures grown by LP-MOCVD[C], 1997, 95-98.
Authors:  Yang Q.;  Hartmann Q.J.;  Curtis A.P.;  Lin C.;  Ahmari D.A.; et al.
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