| Status | 已發表Published |
| Characterization of highly textured PZT thin films grown on LaNiO 3 coated Si substrates by MOCVD | |
| Lin C.H.; Yen B.M.; Chen H.; Wu T.B.; Kuo H.C.; Stillman G.E. | |
| 1998 | |
| Source Publication | Materials Research Society Symposium - Proceedings
 |
| Volume | 493 |
| Pages | 189-194 |
| Abstract | Highly textured PbZr Ti O (PZT) thin films with x = 0-0.6 were grown on LaNiO coated Si substrates at 600°C by metal-organic chemical vapor deposition (MOCVD). The preferred crystalline orientation of PZT thin films with various Zr concentration were characterized by X-ray diffraction (XRD). Microstructures were studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The dielectric constants, hysteresis and fatigue behavior of these thin films were also measured. The relationship between growth rate and the preferential orientation is discussed. Furthermore, the dependence of the electrical properties on Zr concentration and preferential orientation is demonstrated. |
| URL | View the original |
| Language | 英語English |
| Fulltext Access | |
| Document Type | Conference paper |
| Collection | University of Macau |
| Affiliation | University of Illinois at Urbana-Champaign |
| Recommended Citation GB/T 7714 | Lin C.H.,Yen B.M.,Chen H.,et al. Characterization of highly textured PZT thin films grown on LaNiO 3 coated Si substrates by MOCVD[C], 1998, 189-194. |
| APA | Lin C.H.., Yen B.M.., Chen H.., Wu T.B.., Kuo H.C.., & Stillman G.E. (1998). Characterization of highly textured PZT thin films grown on LaNiO 3 coated Si substrates by MOCVD. Materials Research Society Symposium - Proceedings, 493, 189-194. |
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