Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy

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	Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy
	Kuo H.C.; Thomas S.; Norton T.U.; Moser B.G.; Stillman G.E.; Lin C.H.; Chen H.
	1998-05-01
Source Publication	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
ISSN	10711023
Volume	16 Issue:3 Pages:1377-1380
Abstract	We present in this article a comparison of 1.3 μm InAsP/InGaP strain-compensated multiple quantum well (SC-MQW) modulators with and without an InP insertion layer. Material quality was evaluated by cross-sectional transmission electron microscope analysis, x-ray rocking curves with dynamical simulations, and photoluminescence measurements. Devices were fabricated and device performance criteria such as contrast ratio (C.R.) and uniformity were also compared. It was found that higher C.R. and highly uniform InAsP/InGaP SC-MQW modulators can be achieved by inserting thin InP layers at the heterointerfaces between InAsP and InGaP. © 1998 American Vacuum Society.
URL	View the original
Language	英語English
Fulltext Access	View Full-Text via Scopus
Document Type	Journal article
Collection	University of Macau
Affiliation	University of Illinois at Urbana-Champaign
Recommended Citation GB/T 7714	Kuo H.C.,Thomas S.,Norton T.U.,et al. Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy[J]. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1998, 16(3), 1377-1380.
APA	Kuo H.C.., Thomas S.., Norton T.U.., Moser B.G.., Stillman G.E.., Lin C.H.., & Chen H. (1998). Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 16(3), 1377-1380.
MLA	Kuo H.C.,et al."Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy".Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 16.3(1998):1377-1380.

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