| Status | 已發表Published |
| Thermal reliability of Pt/Ti/Pt/Au Schottky contact on InP with a GalnP Schottky barrier enhancement layer | |
| Kuo H.C.; Lin C.H.; Moser B.C.; Hsia H.; Tang Z.; Chen H.; Feng M.; Stillman G.E. | |
| 1999-12-01 | |
| Source Publication | Materials Research Society Symposium - Proceedings
 |
| Volume | 535 |
| Pages | 231-236 |
| Abstract | We present the studies of the thermal stability of various metal including Au, Ti, Pt, Pd and Pt/Ti/Pt/Au Schottky contacts on strained GaInP/InP semiconductors. Auger electron spectroscopy (AES) analysis and cross-sectional TEM of the thermally annealed Schottky diode were performed to investigate the failure mechanism. For Pt/Ti/Pt/Au schottky contacts on strained GalnP/InP, no significant change was found for samples annealed up to 350°C. However, a drastic degradation of the barrier height and the ideality factor was observed in samples annealed at 400°C, which may be caused by the interdiffusion and penetration of metals into the semiconductor. Finally InGaAs/InP doped channel heterojunction FET's (DC-HFET's) with a GaInP Schottky barrier enhancement layer (SBEL) were grown and fabricated. The 0.25 μm gate-length devices showed excellent DC and RF performance, with an f of 117 GHz and an f of 168 GHz. |
| URL | View the original |
| Language | 英語English |
| Fulltext Access | |
| Document Type | Conference paper |
| Collection | University of Macau |
| Affiliation | University of Illinois at Urbana-Champaign |
| Recommended Citation GB/T 7714 | Kuo H.C.,Lin C.H.,Moser B.C.,et al. Thermal reliability of Pt/Ti/Pt/Au Schottky contact on InP with a GalnP Schottky barrier enhancement layer[C], 1999, 231-236. |
| APA | Kuo H.C.., Lin C.H.., Moser B.C.., Hsia H.., Tang Z.., Chen H.., Feng M.., & Stillman G.E. (1999). Thermal reliability of Pt/Ti/Pt/Au Schottky contact on InP with a GalnP Schottky barrier enhancement layer. Materials Research Society Symposium - Proceedings, 535, 231-236. |
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