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Novel local silicon-gate carbon nanotube transistors combining silicon-on-insulator technology for integration Journal article
Zhang M., Chan P.C.H., Chai Y., Liang Q., Tang Z.K.. Novel local silicon-gate carbon nanotube transistors combining silicon-on-insulator technology for integration[J]. IEEE Transactions on Nanotechnology, 2009, 8(2), 260-268.
Authors:  Zhang M.;  Chan P.C.H.;  Chai Y.;  Liang Q.;  Tang Z.K.
Favorite | TC[WOS]:8 TC[Scopus]:8 | Submit date:2019/04/08
Carbon Nanotube (Cnt)  Carbon Nanotube Fet (cnFet)  Integration  Nanotechnology  Silicon-on-insulator (Soi)  
Applying SOI technology on carbon nanotube transistors Conference paper
Zhang M., Chan P.C.H., Chai Y., Tang Z.. Applying SOI technology on carbon nanotube transistors[C], 2007, 147-148.
Authors:  Zhang M.;  Chan P.C.H.;  Chai Y.;  Tang Z.
Favorite | TC[Scopus]:4 | Submit date:2019/04/08
Radio-frequency transmission properties of carbon nanotubes in a field-effect transistor configuration Journal article
Zhang M., Huo X., Chan P.C.H., Liang Q., Tang Z.K.. Radio-frequency transmission properties of carbon nanotubes in a field-effect transistor configuration[J]. IEEE Electron Device Letters, 2006, 27(8), 668-670.
Authors:  Zhang M.;  Huo X.;  Chan P.C.H.;  Liang Q.;  Tang Z.K.
Favorite | TC[WOS]:27 TC[Scopus]:36 | Submit date:2019/04/08
Carbon Nanotube (Cnt)  Radio Frequency (Rf)  S-parameter  Transmission  
Local silicon-gate carbon nanotube field effect transistors using silicon-on-insulator technology Journal article
Zhang M., Chan P.C.H., Chai Y., Liang Q., Tang Z.K.. Local silicon-gate carbon nanotube field effect transistors using silicon-on-insulator technology[J]. Applied Physics Letters, 2006, 89(2).
Authors:  Zhang M.;  Chan P.C.H.;  Chai Y.;  Liang Q.;  Tang Z.K.
Favorite | TC[WOS]:13 TC[Scopus]:16 | Submit date:2019/04/08
Radio-frequency characterization for the single-walled carbon nanotubes Journal article
Zhang M., Huo X., Chan P.C.H., Liang Q., Tang Z.K.. Radio-frequency characterization for the single-walled carbon nanotubes[J]. Applied Physics Letters, 2006, 88(16).
Authors:  Zhang M.;  Huo X.;  Chan P.C.H.;  Liang Q.;  Tang Z.K.
Favorite | TC[WOS]:29 TC[Scopus]:45 | Submit date:2019/04/08
High frequency characterization for the single-walled carbon nanorubes using S-parameter Conference paper
Zhang M., Huo X., Liang Q., Tang Z.K., Chan P.C.H.. High frequency characterization for the single-walled carbon nanorubes using S-parameter[C], 2004, 107-109.
Authors:  Zhang M.;  Huo X.;  Liang Q.;  Tang Z.K.;  Chan P.C.H.
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Carbon Nanotube  High frequency  Nanotechnology  Semiconductor devices  
High frequency S parameters characterization of back-gate carbon nanotube field-effect transistors Conference paper
Huo X., Zhang M., Chan P.C.H., Liang Q., Tang Z.K.. High frequency S parameters characterization of back-gate carbon nanotube field-effect transistors[C], 2004, 691-694.
Authors:  Huo X.;  Zhang M.;  Chan P.C.H.;  Liang Q.;  Tang Z.K.
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A Novel Local Bottom-gate Carbon Nanotube Field Effect Transistor on SOI Conference paper
Zhang M., Chan P.C.H., Liang Q., Tang Z.. A Novel Local Bottom-gate Carbon Nanotube Field Effect Transistor on SOI[C], 2003, 63-64.
Authors:  Zhang M.;  Chan P.C.H.;  Liang Q.;  Tang Z.
Favorite |  | Submit date:2019/04/08