| Status | 已發表Published |
| High frequency S parameters characterization of back-gate carbon nanotube field-effect transistors | |
Huo X.; Zhang M.; Chan P.C.H.; Liang Q.; Tang Z.K.
| |
| 2004-12-01 | |
| Source Publication | Technical Digest - International Electron Devices Meeting, IEDM
 |
| Pages | 691-694 |
| Abstract | High frequency S parameters characterization up to 10 GHz for back-gate Carbon Nanotube Field-Effect Transistors (CNFETs) was carried for the first time. The high frequency transmission properties of back-gate CNFETs were compared and analyzed at different gate bias voltages using a lumped element model. ©2004 IEEE. |
| URL | View the original |
| Language | 英語English |
| Fulltext Access | |
| Document Type | Conference paper |
| Collection | University of Macau |
| Affiliation | Hong Kong University of Science and Technology |
| Recommended Citation GB/T 7714 | Huo X.,Zhang M.,Chan P.C.H.,et al. High frequency S parameters characterization of back-gate carbon nanotube field-effect transistors[C], 2004, 691-694. |
| APA | Huo X.., Zhang M.., Chan P.C.H.., Liang Q.., & Tang Z.K. (2004). High frequency S parameters characterization of back-gate carbon nanotube field-effect transistors. Technical Digest - International Electron Devices Meeting, IEDM, 691-694. |
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