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Radio-frequency transmission properties of carbon nanotubes in a field-effect transistor configuration
Zhang M.; Huo X.; Chan P.C.H.; Liang Q.; Tang Z.K.
2006-08-01
Source PublicationIEEE Electron Device Letters
ISSN07413106
Volume27Issue:8Pages:668-670
Abstract

In this letter, the radio-frequency (RF) transmission properties of single-walled carbon nanotubes (CNTs) have been characterized up to the frequency of 12 GHz in a carbon nanotube field-effect transistor (CNFET) configuration using a two-port S-parameter method for the first time. The RF characteristics of the CNTs were measured from the drain to the source of the CNFET. A resistance, inductance, and capacitance model has been proposed, and the element values have been extracted. Without the effect of the parasitics, the RF signal transmission in the CNTs presents no degeneration even at 12 GHz. The capacitive contact between CNTs and metal electrodes is reported. © 2006 IEEE.

KeywordCarbon Nanotube (Cnt) Radio Frequency (Rf) S-parameter Transmission
DOI10.1109/LED.2006.878045
URLView the original
Language英語English
WOS IDWOS:000239440700012
Scopus ID2-s2.0-33746537841
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Citation statistics
Document TypeJournal article
CollectionUniversity of Macau
AffiliationHong Kong University of Science and Technology
Recommended Citation
GB/T 7714
Zhang M.,Huo X.,Chan P.C.H.,et al. Radio-frequency transmission properties of carbon nanotubes in a field-effect transistor configuration[J]. IEEE Electron Device Letters, 2006, 27(8), 668-670.
APA Zhang M.., Huo X.., Chan P.C.H.., Liang Q.., & Tang Z.K. (2006). Radio-frequency transmission properties of carbon nanotubes in a field-effect transistor configuration. IEEE Electron Device Letters, 27(8), 668-670.
MLA Zhang M.,et al."Radio-frequency transmission properties of carbon nanotubes in a field-effect transistor configuration".IEEE Electron Device Letters 27.8(2006):668-670.
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