| Status | 已發表Published |
| A Novel Local Bottom-gate Carbon Nanotube Field Effect Transistor on SOI | |
| Zhang M.; Chan P.C.H.; Liang Q.; Tang Z. | |
| 2003-11-06 | |
| Source Publication | IEEE International SOI Conference
 |
| Pages | 63-64 |
| Abstract | A study was presented on the fabrication and effects of a novel local bottom-gate carbon nanotube field effect transistor (CNFET) using SOI substrate. E-beam lithography and transmission electron microscopy (TEM) were used for the study. The results showed that the fabrication process is simple and individual device operation, lower operation voltage and better gate capacitive coupling can be achieved. |
| URL | View the original |
| Language | 英語English |
| Fulltext Access | |
| Document Type | Conference paper |
| Collection | University of Macau |
| Affiliation | Hong Kong University of Science and Technology |
| Recommended Citation GB/T 7714 | Zhang M.,Chan P.C.H.,Liang Q.,et al. A Novel Local Bottom-gate Carbon Nanotube Field Effect Transistor on SOI[C], 2003, 63-64. |
| APA | Zhang M.., Chan P.C.H.., Liang Q.., & Tang Z. (2003). A Novel Local Bottom-gate Carbon Nanotube Field Effect Transistor on SOI. IEEE International SOI Conference, 63-64. |
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