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Ultracompact Position-Controlled InP Nanopillar LEDs on Silicon with Bright Electroluminescence at Telecommunication Wavelengths Journal article
Deshpande S., Bhattacharya I., Malheiros-Silveira G., Ng K.W., Schuster F., Mantei W., Cook K., Chang-Hasnain C.. Ultracompact Position-Controlled InP Nanopillar LEDs on Silicon with Bright Electroluminescence at Telecommunication Wavelengths[J]. ACS Photonics, 2017, 4(3), 695-702.
Authors:  Deshpande S.;  Bhattacharya I.;  Malheiros-Silveira G.;  Ng K.W.;  Schuster F.; et al.
Favorite | TC[WOS]:23 TC[Scopus]:29 | Submit date:2019/04/08
Iii−v  Inp  Leds  Mocvd Growth  Nanowire Laser  Nanowire/nanopillar  Photonic Integrated Circuit  Quantum-well  Silicon Photonics  
Epitaxial (110)-oriented cubic MgZnO films on m-plane sapphire for solar-blind UV photodetectors Journal article
Zheng J., Zhang Z.-Z., Zhang J.-Y., Liu Y.-C., Wang S.-P., Jiang M.-M., Chen X., Li B.-H., Zhao D.-X., Liu L., Wang L.-K., Shan C.-X., Shen D.-Z.. Epitaxial (110)-oriented cubic MgZnO films on m-plane sapphire for solar-blind UV photodetectors[J]. Faguang Xuebao/Chinese Journal of Luminescence, 2014, 35(6), 678-683.
Authors:  Zheng J.;  Zhang Z.-Z.;  Zhang J.-Y.;  Liu Y.-C.;  Wang S.-P.; et al.
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(110)-oriented  Cubic Mgzno  Mocvd  Solar-blind Uv Photodetectors  
Photoluminescence of ZnO thin films grown on GaN templates by atmospheric pressure MOCVD Journal article
Jiang F., Dai J., Wang L., Fang W., Pu Y., Wang Q., Tang Z.. Photoluminescence of ZnO thin films grown on GaN templates by atmospheric pressure MOCVD[J]. Journal of Luminescence, 2007, 122-123(1-2), 162-164.
Authors:  Jiang F.;  Dai J.;  Wang L.;  Fang W.;  Pu Y.; et al.
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Mocvd  Photoluminescence  Zno/gan/al 2 o 3  
Characterization of MOCVD grown optical coatings of Sc 2 O 3 and Ta-doped SnO 2 Conference paper
Lee S.W., Daga A., Xu Z.K., Chen H.. Characterization of MOCVD grown optical coatings of Sc 2 O 3 and Ta-doped SnO 2[C], 2003, 134-137.
Authors:  Lee S.W.;  Daga A.;  Xu Z.K.;  Chen H.
Favorite | TC[WOS]:5 TC[Scopus]:7 | Submit date:2019/04/08
Mocvd  Sc 2 o 3  Ta-doped Sno 2  
Growth and dielectric properties of Pb(ScTa)1-xTi xO3 (PSTT) thin films by MOCVD method Journal article
Lin C.-H., Friddle P.A., Ma C.-H., Chen H.. Growth and dielectric properties of Pb(ScTa)1-xTi xO3 (PSTT) thin films by MOCVD method[J]. Tamkang Journal of Science and Engineering, 2002, 5(1), 1-6.
Authors:  Lin C.-H.;  Friddle P.A.;  Ma C.-H.;  Chen H.
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Dielectric Properties  MOCVD  PSTT Relaxor Ferroelectric  Thin Films  
Microstructural evolution and electrical property of Ta-doped SnO2 films grown on Al2O3(0001) by metalorganic chemical vapor deposition Journal article
Kim Y.-W., Lee S.W., Chen H.. Microstructural evolution and electrical property of Ta-doped SnO2 films grown on Al2O3(0001) by metalorganic chemical vapor deposition[J]. Thin Solid Films, 2002, 405(1-2), 256-262.
Authors:  Kim Y.-W.;  Lee S.W.;  Chen H.
Favorite | TC[WOS]:37 TC[Scopus]:40 | Submit date:2019/04/08
Epitaxy  Mocvd  Sno2  Ta-doping  
Domain structure and stability of MOCVD-derived ferroelectric thin films Journal article
Lin C.H., Yen B.M., Batzer R.S., Chen H.. Domain structure and stability of MOCVD-derived ferroelectric thin films[J]. Ferroelectrics, 1999, 221(1-4), 237-244.
Authors:  Lin C.H.;  Yen B.M.;  Batzer R.S.;  Chen H.
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Domain  Ferroelectrics  Mocvd  Rhombohedral  Tetragonal  
H 2 sensing behavior of MOCVD-derived SnO 2 thin films Journal article
Lee S.W., Tsai P.P., Chen H.. H 2 sensing behavior of MOCVD-derived SnO 2 thin films[J]. Sensors and Actuators, B: Chemical, 1997, 41(1-3), 55-61.
Authors:  Lee S.W.;  Tsai P.P.;  Chen H.
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Gas Sensor  Mocvd  Sno 2  Thin Film  
H 2 sensing behavior of MOCVD-derived SnO 2 thin films Journal article
Lee S.W., Tsai P.P., Chen H.. H 2 sensing behavior of MOCVD-derived SnO 2 thin films[J]. Sensors and Actuators, B: Chemical, 1997, 41(1-3), 55-61.
Authors:  Lee S.W.;  Tsai P.P.;  Chen H.
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Gas Sensor  Mocvd  Sno 2  Thin Film  
Low-temperature preparation of perovskite Pb(Sc0.5Ta0.5) O3 thin films using MOCVD Journal article
Liu D., Chen H.. Low-temperature preparation of perovskite Pb(Sc0.5Ta0.5) O3 thin films using MOCVD[J]. Materials Letters, 1996, 28(1-3), 17-20.
Authors:  Liu D.;  Chen H.
Favorite | TC[WOS]:22 TC[Scopus]:22 | Submit date:2019/04/08
Ferroelectric  Imaging  Lead Scandium Tantalate  Low Temperature Deposition  Mocvd  Perovskite  Pyroelectric  Silicon Substrates  Thin Films