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Self-Assembled Formation of Well-Aligned Cu-Te Nano-Rods on Heavily Cu-Doped ZnTe Thin Films Journal article
Jing Liang, Man Kit Cheng, Ying Hoi Lai, Guanglu Wei, Sean Derman Yang, Gan Wang, Sut Kam Ho, Kam Weng Tam, Iam Keong Sou. Self-Assembled Formation of Well-Aligned Cu-Te Nano-Rods on Heavily Cu-Doped ZnTe Thin Films[J]. Nanoscale Research Letters, 2016, 11(1).
Authors:  Jing Liang;  Man Kit Cheng;  Ying Hoi Lai;  Guanglu Wei;  Sean Derman Yang; et al.
Favorite | TC[WOS]:0 TC[Scopus]:0 | Submit date：2019/02/13
Heavily Cu-doped Znte  Heavily Cu-doped Znte  Mbe  Mbe  Self-assembled Nano-rods  Self-assembled Nano-rods  Surface Modulation  Surface Modulation  
Progress on preparation of InAs nanowires by molecular beam epitaxy Journal article
Li R.-X., Tang J.-L., Fang D., Wang S.-P., Zhao H.-F., Fang X., Wei Z.-P., Jia H.-M., Wang X.-H., Ma X.-H.. Progress on preparation of InAs nanowires by molecular beam epitaxy[J]. MATERIALS SCIENCE FORUM, 2016, 852, 349-355.
Authors:  Li R.-X.;  Tang J.-L.;  Fang D.;  Wang S.-P.;  Zhao H.-F.; et al.
Favorite | TC[Scopus]:0  IF:0.399/0.000 | Submit date：2019/04/08
Applications  Growth  Inas Nanowires  Mbe  
Growth of ZnO single crystal and BeZnO alloy and ultraviolet detector Journal article
Wang Y.-C., Zhang Q.-L., Su L.-X., Shen Z.-C., Wu T.-Z., Tang Z.-K.. Growth of ZnO single crystal and BeZnO alloy and ultraviolet detector[J]. Faguang Xuebao/Chinese Journal of Luminescence, 2015, 36(11), 1233-1239.
Authors:  Wang Y.-C.;  Zhang Q.-L.;  Su L.-X.;  Shen Z.-C.;  Wu T.-Z.; et al.
Favorite | TC[Scopus]:2 | Submit date：2019/04/08
Bexzn1-xo Alloy  Mbe  Surface Treatment  Ultraviolet Detector  Zno Single Crystal  
Study of MgZnO semiconductor materials using photoluminescence and resonance Raman spectroscopy Journal article
Wang Y.-C., Wu T.-Z., Zhang Q.-L., Chen M.-M., Su L.-X., Tang Z.-K.. Study of MgZnO semiconductor materials using photoluminescence and resonance Raman spectroscopy[J]. Faguang Xuebao/Chinese Journal of Luminescence, 2013, 34(9), 1149-1154.
Authors:  Wang Y.-C.;  Wu T.-Z.;  Zhang Q.-L.;  Chen M.-M.;  Su L.-X.; et al.
Favorite | TC[Scopus]:1 | Submit date：2019/04/08
Mgxzn1-xo  P-mbe  Photoluminescence  Resonance Raman Spectroscopy  X-ray Diffraction  
Fabrication of p-type nitrogen-doped MgZnO by depressing N-related donors Conference paper
Wei Z.P., Yao B., Li Y.F., Shen D.Z., Lu Y.M., Zhang Z.Z., Li B.H., Zheng C.J., Wang X.H., Zhang J.Y., Zhao D.X., Fan X.W., Tang Z.K.. Fabrication of p-type nitrogen-doped MgZnO by depressing N-related donors[C], 2008, 3043-3046.
Authors:  Wei Z.P.;  Yao B.;  Li Y.F.;  Shen D.Z.;  Lu Y.M.; et al.
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N doping  P-MBE  ZnMgO/ZnO p-n junction  
Fabrication of nitrogen doped p-ZnO and ZnO light-emitting diodes on sapphire Conference paper
Wei Z.P., Lu Y.M., Shen D.Z., Zhang Z.Z., Yao B., Li B.H., Zhang J.Y., Zhao D.X., Fan X.W., Tang Z.K.. Fabrication of nitrogen doped p-ZnO and ZnO light-emitting diodes on sapphire[C], 2008, 3038-3042.
Authors:  Wei Z.P.;  Lu Y.M.;  Shen D.Z.;  Zhang Z.Z.;  Yao B.; et al.
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Electroluminescence  LED  P-MBE  P-type ZnO  
Room temperature ultraviolet laser emission from ZnO nanocrystal thin films grown by laser MBE Journal article
Ohtomo A., Kawasaki M., Sakurai Y., Yoshida Y., Koinuma H., Yu P., Tang Z.K., Wong G.K.L., Segawa Y.. Room temperature ultraviolet laser emission from ZnO nanocrystal thin films grown by laser MBE[J]. Materials Science and Engineering B, 1998, 54 B54(1-2), 24-28.
Authors:  Ohtomo A.;  Kawasaki M.;  Sakurai Y.;  Yoshida Y.;  Koinuma H.; et al.
Favorite |  | Submit date：2019/04/08
Exciton-exciton collision  Laser MBE  Ultraviolet laser emission  ZnO nanocrystals  
Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells Journal article
Sengupta D.K., Jackson S.L., Curtis A.P., Fang W., Malin J.I., Horton T.U., Kuo H.C., Moy A., Miller J., Hsieh K.C., Cheng K.Y., Chen H., Adesida I., Chuang S.L., Feng M., Stillman G.E., Wu W., Tucker J., Chang Y.C., Li L., Liu H.C.. Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells[J]. Journal of Electronic Materials, 1997, 26(12), 1382-1388.
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.; et al.
Favorite | TC[WOS]:1 TC[Scopus]:1 | Submit date：2019/04/08
Gas Source Molecular Beam Epitaxy (Mbe)  Ingaas/inp  Quantum Well Infrared Photodetectors Qwips  
Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells Journal article
Sengupta D.K., Jackson S.L., Curtis A.P., Fang W., Malin J.I., Horton T.U., Kuo H.C., Moy A., Miller J., Hsieh K.C., Cheng K.Y., Chen H., Adesida I., Chuang S.L., Feng M., Stillman G.E., Wu W., Tucker J., Chang Y.C., Li L., Liu H.C.. Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells[J]. Journal of Electronic Materials, 1997, 26(12), 1382-1388.
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.; et al.
Favorite | TC[WOS]:1 TC[Scopus]:1 | Submit date：2019/04/08
Gas Source Molecular Beam Epitaxy (Mbe)  Ingaas/inp  Quantum Well Infrared Photodetectors Qwips