To develop ZnO-based deep ultraviolet (UV) detectors, high-quality ZnO and BeZnO films were grown on c-plane of sapphire substrates using plasma-assisted molecular beam epitaxy (PAMBE). X-ray photoelectron spectroscopy (XPS) tests showed that the mole fractions of Be in BeZnO alloys followed by 1.8%, 4.9%, 8.0%, 15.3%, respectively. Prototypes of ZnO ultraviolet detectors with the metal-semiconductor-metal (MSM) structure were fabricated and tested, which showed a large on/off ratio and high responsivity, as well as the demonstration of blue-shift tuning of responsivity for BeZnO-based detectors with Be doping. The cut-off response wavelength of BeZnO detectors is 366 nm, moreover, the device has good signal-to-noise up to 2-3 orders of magnitude. These achievements should provide valuable insights and experiences for the ZnO-based materials and devices. Moreover, oxygen plasma surface treatment was studied to probe the influence on dark current. By appropriate surface treatment, the dark current of ZnO detector can be reduced by 4 orders of magnitude.