Fabrication of p-type nitrogen-doped MgZnO by depressing N-related donors

UM > INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING

Status	已發表Published
	Fabrication of p-type nitrogen-doped MgZnO by depressing N-related donors
	Wei Z.P.1; Yao B.1; Li Y.F.1; Shen D.Z.1; Lu Y.M.1; Zhang Z.Z.1; Li B.H.1; Zheng C.J.1; Wang X.H.1; Zhang J.Y.1; Zhao D.X.1; Fan X.W.1; Tang Z.K.4
	2008-11-01
Source Publication	Journal of the Korean Physical Society
Volume	53
Issue	5 PART 2
Pages	3043-3046
Abstract	Wurtzite nitrogen-doped MgZnO (MgZnO:N) films were grown on c-plane sapphire by using plasma-assisted molecular beam epitaxy with radical NO as the oxygen source and nitrogen dopant. P-type conduction of MgZnO:N was obtained by decreasing the donor defects ((N), V, etc.) through annealing, revealing a hole concentration of 6.1 × 10 cm and a mobility of 6.42 cm/Vs. Furthermore, as-grown p-type films with a hole concentration of 1 × 10 cm and a mobility of 3 cm/Vs were obtained by decreasing the (N) double donor defect through control of the plasma conditions. ZnMgO:N/ZnO p-n junctions were obtained by using these p-type films. Diode-like, rectifying I-V characteristics with a threshold voltage of about 5 V and a different reverse leakage current were observed at room temperature.
Keyword	N doping P-MBE ZnMgO/ZnO p-n junction
URL	View the original
Language	英語English
Fulltext Access	View Full-Text via Scopus
Document Type	Conference paper
Collection	INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Affiliation	1.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences 2.Chinese Academy of Sciences 3.Changchun University of Science and Technology 4.Hong Kong University of Science and Technology
Recommended Citation GB/T 7714	Wei Z.P.,Yao B.,Li Y.F.,et al. Fabrication of p-type nitrogen-doped MgZnO by depressing N-related donors[C], 2008, 3043-3046.
APA	Wei Z.P.., Yao B.., Li Y.F.., Shen D.Z.., Lu Y.M.., Zhang Z.Z.., Li B.H.., Zheng C.J.., Wang X.H.., Zhang J.Y.., Zhao D.X.., Fan X.W.., & Tang Z.K. (2008). Fabrication of p-type nitrogen-doped MgZnO by depressing N-related donors. Journal of the Korean Physical Society, 53(5 PART 2), 3043-3046.

Files in This Item:
There are no files associated with this item.

If you have any objections to this item, please fill out the form below and the administrator will contact you as soon as possible.
Content:
Email：	*
Affiliation No.
Verification Code:	Refresh

Any comments and suggestions are welcomed.
Title:	*
Content:
Email：	*
Verification Code:	Refresh