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Direct current field adjustable ferroelectric behaviour in (Pb, Nb) (Zr, Sn, Ti)O3 antiferroelectric thin films Journal article
Zhai J., Chen H., Colla E.V., Wu T.B.. Direct current field adjustable ferroelectric behaviour in (Pb, Nb) (Zr, Sn, Ti)O3 antiferroelectric thin films[J]. Journal of Physics Condensed Matter, 2003, 15(6), 963-969.
Authors:  Zhai J.;  Chen H.;  Colla E.V.;  Wu T.B.
Favorite | TC[WOS]:20 TC[Scopus]:22 | Submit date：2019/04/08
Dielectric and ferroelectric properties of highly oriented (Pb,Nb)(Zr,Sn,Ti)O3 thin films grown by a sol-gel process Journal article
Jiwei Z., Cheung M.H., Xu Z.K., Li X., Chen H., Colla E.V., Wu T.B.. Dielectric and ferroelectric properties of highly oriented (Pb,Nb)(Zr,Sn,Ti)O3 thin films grown by a sol-gel process[J]. Applied Physics Letters, 2002, 81(19), 3621-3623.
Authors:  Jiwei Z.;  Cheung M.H.;  Xu Z.K.;  Li X.;  Chen H.; et al.
Favorite | TC[WOS]:24 TC[Scopus]:31 | Submit date：2019/04/08
Dielectric properties of oriented PbZrO 3 thin films grown by sol-gel process Journal article
Zhai J., Yao Y., Li X., Hung T.F., Xu Z.K., Chen H., Colla E.V., Wu T.B.. Dielectric properties of oriented PbZrO 3 thin films grown by sol-gel process[J]. Journal of Applied Physics, 2002, 92(7), 3990-3994.
Authors:  Zhai J.;  Yao Y.;  Li X.;  Hung T.F.;  Xu Z.K.; et al.
Favorite | TC[WOS]:41 TC[Scopus]:40 | Submit date：2019/04/08
Electrical characteristics of 25 nm Pr(ZrTi)O3 thin films grown on Si by metalorganic chemical vapor deposition Journal article
Lin C.H., Friddle P.A., Lu X., Chen H., Kim Y., Wu T.B.. Electrical characteristics of 25 nm Pr(ZrTi)O3 thin films grown on Si by metalorganic chemical vapor deposition[J]. Journal of Applied Physics, 2000, 88(4), 2157-2159.
Authors:  Lin C.H.;  Friddle P.A.;  Lu X.;  Chen H.;  Kim Y.; et al.
Favorite | TC[WOS]:10 TC[Scopus]:10 | Submit date：2019/04/08
Domain structure and electrical properties of highly textured PbZr x Ti 1-x O 3 thin films grown on LaNiO 3 -electrode-buffered Si by metalorganic chemical vapor deposition Journal article
Lin C.H., Yen B.M., Kuo H.C., Chen H., Wu T.B., Stillman G.E.. Domain structure and electrical properties of highly textured PbZr x Ti 1-x O 3 thin films grown on LaNiO 3 -electrode-buffered Si by metalorganic chemical vapor deposition[J]. Journal of Materials Research, 2000, 15(1), 115-124.
Authors:  Lin C.H.;  Yen B.M.;  Kuo H.C.;  Chen H.;  Wu T.B.; et al.
Favorite | TC[WOS]:10 TC[Scopus]:9 | Submit date：2019/04/08
Dielectric properties of metal-organic chemical vapor deposited highly textured Pb(ScTa)1-xTixO3 (x=0-0.3) relaxor ferroelectric thin films on LaNiO3 electrode buffered Si Journal article
Lin C.H., Lee S.W., Chen H., Wu T.B.. Dielectric properties of metal-organic chemical vapor deposited highly textured Pb(ScTa)1-xTixO3 (x=0-0.3) relaxor ferroelectric thin films on LaNiO3 electrode buffered Si[J]. Applied Physics Letters, 1999, 75(16), 2485-2487.
Authors:  Lin C.H.;  Lee S.W.;  Chen H.;  Wu T.B.
Favorite | TC[WOS]:11 TC[Scopus]:12 | Submit date：2019/04/08
Characterization of highly textured PZT thin films grown on LaNiO 3 coated Si substrates by MOCVD Conference paper
Lin C.H., Yen B.M., Chen H., Wu T.B., Kuo H.C., Stillman G.E.. Characterization of highly textured PZT thin films grown on LaNiO 3 coated Si substrates by MOCVD[C], 1998, 189-194.
Authors:  Lin C.H.;  Yen B.M.;  Chen H.;  Wu T.B.;  Kuo H.C.; et al.
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