Highly (100) textured Pb(ScTa)TiO (x=0-0.3) thin films were grown on LaNiO/Pt/Ti electrode-coated Si substrate using metal-organic chemical vapor deposition at 685°C. Ti addition was introduced to modify the dielectric properties. Diffuse phase transition, typical of relaxor ferroelectrics was noticed. As Ti content increased from 0% to 30%, the phase transition temperature (T) gradually shifted from -10 to 120°C with the dielectric constant at T increased from 1397 to 1992 (1 kHz). Loss tangent values are generally below 0.025. © 1999 American Institute of Physics.