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Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer Journal article
Xie X.H., Zhang Z.Z., Li B.H., Wang S.P., Jiang M.M., Shan C.X., Zhao D.X., Chen H.Y., Shen D.Z.. Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer[J]. APPLIED PHYSICS LETTERS, 2013, 102(23).
Authors:  Xie X.H.;  Zhang Z.Z.;  Li B.H.;  Wang S.P.;  Jiang M.M.; et al.
Favorite | TC[WOS]:26 TC[Scopus]:26  IF:3.5/3.5 | Submit date：2019/04/08
On the origin of intrinsic donors in ZnO Journal article
Sun F., Shan C.X., Wang S.P., Li B.H., Zhang J.Y., Zhang Z.Z., Zhao D.X., Yao B., Shen D.Z., Fan X.W.. On the origin of intrinsic donors in ZnO[J]. APPLIED SURFACE SCIENCE, 2010, 256(11), 3390-3393.
Authors:  Sun F.;  Shan C.X.;  Wang S.P.;  Li B.H.;  Zhang J.Y.; et al.
Favorite | TC[WOS]:22 TC[Scopus]:21  IF:6.3/5.9 | Submit date：2019/04/08
Carrier Concentration  Hall Measurement  Intrinsic Donors  Zinc Oxide  
Electrical and optical properties of ZnO films grown by molecular beam epitaxy Journal article
Wang S.P., Shan C.X., Yao B., Li B.H., Zhang J.Y., Zhao D.X., Shen D.Z., Fan X.W.. Electrical and optical properties of ZnO films grown by molecular beam epitaxy[J]. APPLIED SURFACE SCIENCE, 2009, 255(9), 4913-4915.
Authors:  Wang S.P.;  Shan C.X.;  Yao B.;  Li B.H.;  Zhang J.Y.; et al.
Favorite | TC[WOS]:24 TC[Scopus]:27  IF:6.3/5.9 | Submit date：2019/04/08
Grain Boundary  Hall Mobility  Molecular Beam Epitaxy  Zinc Oxide  
Fabrication of p-type nitrogen-doped MgZnO by depressing N-related donors Conference paper
Wei Z.P., Yao B., Li Y.F., Shen D.Z., Lu Y.M., Zhang Z.Z., Li B.H., Zheng C.J., Wang X.H., Zhang J.Y., Zhao D.X., Fan X.W., Tang Z.K.. Fabrication of p-type nitrogen-doped MgZnO by depressing N-related donors[C], 2008, 3043-3046.
Authors:  Wei Z.P.;  Yao B.;  Li Y.F.;  Shen D.Z.;  Lu Y.M.; et al.
Favorite |  | Submit date：2019/04/08
N doping  P-MBE  ZnMgO/ZnO p-n junction  
Fabrication of nitrogen doped p-ZnO and ZnO light-emitting diodes on sapphire Conference paper
Wei Z.P., Lu Y.M., Shen D.Z., Zhang Z.Z., Yao B., Li B.H., Zhang J.Y., Zhao D.X., Fan X.W., Tang Z.K.. Fabrication of nitrogen doped p-ZnO and ZnO light-emitting diodes on sapphire[C], 2008, 3038-3042.
Authors:  Wei Z.P.;  Lu Y.M.;  Shen D.Z.;  Zhang Z.Z.;  Yao B.; et al.
Favorite |  | Submit date：2019/04/08
Electroluminescence  LED  P-MBE  P-type ZnO  
Photoluminescence and acceptor level state of p-type nitrogen-doped MgZnO films Journal article
Wei Z.P., Yao B., Wang X.H., Zhang Z.Z., Lu Y.M., Shen D.Z., Li B.H., Zhang J.Y., Zhao D.X., Fan X.W., Tang Z.K.. Photoluminescence and acceptor level state of p-type nitrogen-doped MgZnO films[J]. Journal of Materials Research, 2007, 22(10), 2791-2795.
Authors:  Wei Z.P.;  Yao B.;  Wang X.H.;  Zhang Z.Z.;  Lu Y.M.; et al.
Favorite | TC[WOS]:6 TC[Scopus]:6 | Submit date：2019/04/08
p-Type ZnO on sapphire by using O2–N2 co-activating and fabrication of ZnO LED Journal article
Z.Z. Zhang, Z.P. Wei, Y.M. Lu, D.Z. Shen, B. Yao, B.H. Li, D.X. Zhao, J.Y. Zhang, X.W. Fan, TANG ZIKANG. p-Type ZnO on sapphire by using O2–N2 co-activating and fabrication of ZnO LED[J]. Journal of Crystal Growth, 2007.
Authors:  Z.Z. Zhang;  Z.P. Wei;  Y.M. Lu;  D.Z. Shen;  B. Yao; et al.
Favorite |   IF:1.7/1.7 | Submit date：2023/09/07
Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE Journal article
Lu Y.M., Wang X., Zhang Z.Z., Shen D.Z., Su S.C., Yao B., Li B.H., Zhang J.Y., Zhao D.X., Fan X.W., Tang Z.K.. Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE[J]. Journal of Crystal Growth, 2007, 301-302(SPEC. ISS.), 373-377.
Authors:  Lu Y.M.;  Wang X.;  Zhang Z.Z.;  Shen D.Z.;  Su S.C.; et al.
Favorite | TC[WOS]:21 TC[Scopus]:23 | Submit date：2019/04/08
A1. Atomic Force Microscopy  A1. Photoluminescence  A1. X-ray Diffraction  A3. Molecular Beam Epitaxy  B1. Zinc Oxide  
p-Type ZnO on sapphire by using O2-N2 co-activating and fabrication of ZnO LED Journal article
Zhang Z.Z., Wei Z.P., Lu Y.M., Shen D.Z., Yao B., Li B.H., Zhao D.X., Zhang J.Y., Fan X.W., Tang Z.K.. p-Type ZnO on sapphire by using O2-N2 co-activating and fabrication of ZnO LED[J]. Journal of Crystal Growth, 2007, 301-302(SPEC. ISS.), 362-365.
Authors:  Zhang Z.Z.;  Wei Z.P.;  Lu Y.M.;  Shen D.Z.;  Yao B.; et al.
Favorite | TC[WOS]:30 TC[Scopus]:32 | Submit date：2019/04/08
A3. Molecular Beam Epitaxy  B2. Semiconducting Ii-vi Materials  B3. Light-emitting Diodes  
Room temperature p-n ZnO blue-violet light-emitting diodes Journal article
Wei Z.P., Lu Y.M., Shen D.Z., Zhang Z.Z., Yao B., Li B.H., Zhang J.Y., Zhao D.X., Fan X.W., Tang Z.K.. Room temperature p-n ZnO blue-violet light-emitting diodes[J]. Applied Physics Letters, 2007, 90(4).
Authors:  Wei Z.P.;  Lu Y.M.;  Shen D.Z.;  Zhang Z.Z.;  Yao B.; et al.
Favorite | TC[WOS]:180 TC[Scopus]:197 | Submit date：2019/04/08