| Residential College | false |
| Status | 已發表Published |
| p-Type ZnO on sapphire by using O2–N2 co-activating and fabrication of ZnO LED | |
Z.Z. Zhang1; Z.P. Wei1; Y.M. Lu1; D.Z. Shen1; B. Yao1; B.H. Li1; D.X. Zhao1; J.Y. Zhang1; X.W. Fan1; TANG ZIKANG2
| |
| 2007-04 | |
| Source Publication | Journal of Crystal Growth
 |
| Document Type | Journal article |
| Collection | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING |
| Affiliation | 1.Key Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16-Dongnanhu Road, Changchun 130033, People's Republic of China 2.Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, People's Republic of China |
| Recommended Citation GB/T 7714 | Z.Z. Zhang,Z.P. Wei,Y.M. Lu,et al. p-Type ZnO on sapphire by using O2–N2 co-activating and fabrication of ZnO LED[J]. Journal of Crystal Growth, 2007. |
| APA | Z.Z. Zhang., Z.P. Wei., Y.M. Lu., D.Z. Shen., B. Yao., B.H. Li., D.X. Zhao., J.Y. Zhang., X.W. Fan., & TANG ZIKANG (2007). p-Type ZnO on sapphire by using O2–N2 co-activating and fabrication of ZnO LED. Journal of Crystal Growth. |
| MLA | Z.Z. Zhang,et al."p-Type ZnO on sapphire by using O2–N2 co-activating and fabrication of ZnO LED".Journal of Crystal Growth (2007). |
| Files in This Item: | There are no files associated with this item. | |||||
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