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Effects of B content on microstructure and mechanical properties of nanocomposite Ti-Bx-Ny thin films Conference paper
Lu Y.H., Sit P., Hung T.F., Chen H., Zhou Z.F., Li K.Y., Shen Y.G.. Effects of B content on microstructure and mechanical properties of nanocomposite Ti-Bx-Ny thin films[C], 2005, 449-457.
Authors:  Lu Y.H.;  Sit P.;  Hung T.F.;  Chen H.;  Zhou Z.F.; et al.
Favorite | TC[WOS]:19 TC[Scopus]:24 | Submit date：2019/04/08
Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy Journal article
Kuo H.C., Thomas S., Norton T.U., Moser B.G., Stillman G.E., Lin C.H., Chen H.. Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy[J]. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1998, 16(3), 1377-1380.
Authors:  Kuo H.C.;  Thomas S.;  Norton T.U.;  Moser B.G.;  Stillman G.E.; et al.
Favorite |  | Submit date：2019/04/08
An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy Journal article
Strite S., Ruan J., Li Z., Salvador A., Chen H., Smith D.J., Choyke W.J., Morkoc H.. An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy[J]. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1991, 9(4), 1924-1929.
Authors:  Strite S.;  Ruan J.;  Li Z.;  Salvador A.;  Chen H.; et al.
Favorite | TC[WOS]:333 TC[Scopus]:334 | Submit date：2019/04/08
Cathodoluminescence  Crystal Structure  Energy Gap  Films  Gallium Arsenides  Gallium Nitrides  Layers  Medium Temperature  Molecular Beam Epitaxy  Optical Properties  Transmission Electron Microscopy  X-ray Diffraction  
An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy Journal article
Strite S., Ruan J., Li Z., Salvador A., Chen H., Smith D.J., Choyke W.J., Morkoc H.. An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy[J]. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1991, 9(4), 1924-1929.
Authors:  Strite S.;  Ruan J.;  Li Z.;  Salvador A.;  Chen H.; et al.
Favorite | TC[WOS]:333 TC[Scopus]:334 | Submit date：2019/04/08
Cathodoluminescence  Crystal Structure  Energy Gap  Films  Gallium Arsenides  Gallium Nitrides  Layers  Medium Temperature  Molecular Beam Epitaxy  Optical Properties  Transmission Electron Microscopy  X-ray Diffraction