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Wafer-Scale GaN-Si(100) Monolithic Heterogeneous Integration Inverters With Improved Output Voltage Swing and Fast Switching Capability by Transfer Printing and Self-Aligned Etching Technology Journal article
Fan, Yutong, Zhang, Weihang, Liu, Zhihong, Zhao, Shenglei, Jiang, Yang, Mak, Pui In, Hao, Yue, Zhang, Jincheng. Wafer-Scale GaN-Si(100) Monolithic Heterogeneous Integration Inverters With Improved Output Voltage Swing and Fast Switching Capability by Transfer Printing and Self-Aligned Etching Technology[J]. IEEE Transactions on Electron Devices, 2024.
Authors:  Fan, Yutong;  Zhang, Weihang;  Liu, Zhihong;  Zhao, Shenglei;  Jiang, Yang; et al.
Favorite | TC[WOS]:0 TC[Scopus]:0  IF:2.9/2.9 | Submit date：2024/05/16
Cmos  Gallium Nitride (Gan)  Inverter  Monolithic Heterogeneous Integration  Si  Wafer-scale  
A Novel 3-DoF Mode Localized BAW Resonant Mass Sensor With High Quality Factor and Resolution Journal article
Wang, Linlin, Quan, Aojie, Wang, Yuan, Pereira Madeira, Bernardo, Li, Chengxin, Kraft, Michael, Wang, Chen. A Novel 3-DoF Mode Localized BAW Resonant Mass Sensor With High Quality Factor and Resolution[J]. IEEE Transactions on Electron Devices, 2024, 71(8), 4926-4931.
Authors:  Wang, Linlin;  Quan, Aojie;  Wang, Yuan;  Pereira Madeira, Bernardo;  Li, Chengxin; et al.
Favorite | TC[WOS]:0 TC[Scopus]:0  IF:2.9/2.9 | Submit date：2024/08/05
3-dof Coupled Bulk Acoustic Wave (Baw) Resonators  Mass Sensor  Mode Localization  Operation In Liquid  Quality Factor  
Self-Powered Implantable CMOS Photovoltaic Cell With 18.6% Efficiency Journal article
Zhao, Jinwei, Parvizi, Roghaieh, Ghannam, Rami, Law, Man Kay, Walton, Finlay, Imran, Muhammad Ali, Heidari, Hadi. Self-Powered Implantable CMOS Photovoltaic Cell With 18.6% Efficiency[J]. IEEE Transactions on Electron Devices, 2023, 70(6), 3149-3154.
Authors:  Zhao, Jinwei;  Parvizi, Roghaieh;  Ghannam, Rami;  Law, Man Kay;  Walton, Finlay; et al.
Favorite | TC[WOS]:6 TC[Scopus]:6  IF:2.9/2.9 | Submit date：2023/07/19
Cmos  Efficiency  Energy Autonomous  Human Skin  Implantable Device  Photovoltaic (Pv) Cell  
Organic Light-Emitting Diodes Array with High-Luminance Stability and Low-Lateral Leakage by Hybridized Plasma Treatments Journal article
Xiong, Zhiyong, Cui, Zhongjie, Wen, Zhuoqi, Hu, Zhe, Mei, Shiliang, Wang, Jing, Zhang, Wanlu, Xie, Fengxian, Guo, Ruiqian. Organic Light-Emitting Diodes Array with High-Luminance Stability and Low-Lateral Leakage by Hybridized Plasma Treatments[J]. IEEE Transactions on Electron Devices, 2022, 69(3), 1107-1114.
Authors:  Xiong, Zhiyong;  Cui, Zhongjie;  Wen, Zhuoqi;  Hu, Zhe;  Mei, Shiliang; et al.
Favorite | TC[WOS]:2 TC[Scopus]:3  IF:2.9/2.9 | Submit date：2022/03/28
Lateral Leakage  Luminance Stability  Organic Light-emitting Diodes (Oleds)  Plasma  
An Ultralow On-Specific Resistance Trench MOSFET with Multiple Stepped Accumulation Layer for Conduction Journal article
Kong, Moufu, Huang, Ke, Guo, Jiaxin, Zhang, Bingke, Wu, Huanjie, Liu, Cong, Wang, Bin. An Ultralow On-Specific Resistance Trench MOSFET with Multiple Stepped Accumulation Layer for Conduction[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68(8), 4022-4027.
Authors:  Kong, Moufu;  Huang, Ke;  Guo, Jiaxin;  Zhang, Bingke;  Wu, Huanjie; et al.
Favorite | TC[WOS]:5 TC[Scopus]:5  IF:2.9/2.9 | Submit date：2021/12/08
Accumulation Layer  Reverse Recovery  Schottky Barrier Diode  Split-gate (Sg)  Trench Mosfet  
A 4μm Diameter SPAD Using Less-doped N-Well Guard Ring in Baseline 65nm CMOS Journal article
Lu, X., Law, M. K., Jiang, Y., Zhao, X., Mak, P. I., Martins, R. P.. A 4μm Diameter SPAD Using Less-doped N-Well Guard Ring in Baseline 65nm CMOS[J]. IEEE Transactions on Electron Devices, 2020, 2223-2225.
Authors:  Lu, X.;  Law, M. K.;  Jiang, Y.;  Zhao, X.;  Mak, P. I.; et al.
Favorite |   IF:2.9/2.9 | Submit date：2022/01/25
Baseline CMOS  Premature Lateral Break-Down  Single-Photon Avalanche Diode (SPAD)  Small Pitch  
A 4-μm diameter SPAD using less-doped N-Well guard ring in baseline 65-nm CMOS Journal article
Lu,Xin, Law,Man Kay, Jiang,Yang, Zhao,Xiaojin, Mak,Pui In, Martins,Rui P.. A 4-μm diameter SPAD using less-doped N-Well guard ring in baseline 65-nm CMOS[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67(5), 2223-2225.
Authors:  Lu,Xin;  Law,Man Kay;  Jiang,Yang;  Zhao,Xiaojin;  Mak,Pui In; et al.
Favorite | TC[WOS]:14 TC[Scopus]:16  IF:2.9/2.9 | Submit date：2021/03/04
Baseline Cmos  Premature Lateral Breakdown  Single-photon Avalanche Diode (Spad)  Small Pitch  
High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric Journal article
Jiang, Huaxing, Liu, Chao, Ng, Kar Wei, Tang, Chak Wah, Lau, Kei May. High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65(12), 5337-5342.
Authors:  Jiang, Huaxing;  Liu, Chao;  Ng, Kar Wei;  Tang, Chak Wah;  Lau, Kei May
Favorite | TC[WOS]:23 TC[Scopus]:27  IF:2.9/2.9 | Submit date：2019/01/17
Iii-nitride  Gate Dielectric  Leakage  Metal-oxide-semiconductor High Electron Mobility Transistors (Moshemts)  Power  Zro2  
A precision CMOS voltage reference exploiting silicon bandgap narrowing effect Journal article
Wang B., Law M.K., Bermak A.. A precision CMOS voltage reference exploiting silicon bandgap narrowing effect[J]. IEEE Transactions on Electron Devices, 2015, 62(7), 2128-2135.
Authors:  Wang B.;  Law M.K.;  Bermak A.
Favorite | TC[WOS]:22 TC[Scopus]:27 | Submit date：2019/02/14
Bandgap Narrowing (Bgn)  Bipolar Junction Transistor (Bjt) Curvature Reduction  Bjt Noise  Cmos Bandgap Voltage Reference (Bgr)  Curvature Correction  Process Spread  Temperature Coefficient (Tc)