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A 0.32 × 0.12 mm2 Cryogenic BiCMOS 0.1–8.8 GHz Low Noise Amplifier Achieving 4 K Noise Temperature for SNWD Readout Journal article
Peng, Yatao, Benserhir, Jad, Castaneda, Mario, Fognini, Andreas, Bruschini, Claudio, Charbon, Edoardo. A 0.32 × 0.12 mm2 Cryogenic BiCMOS 0.1–8.8 GHz Low Noise Amplifier Achieving 4 K Noise Temperature for SNWD Readout[J]. IEEE Transactions on Microwave Theory and Techniques, 2024, 72(4), 2179-2192.
Authors:  Peng, Yatao;  Benserhir, Jad;  Castaneda, Mario;  Fognini, Andreas;  Bruschini, Claudio; et al.
Favorite | TC[WOS]:2 TC[Scopus]:2  IF:4.1/4.2 | Submit date：2024/05/02
Bicmos  Cryogenic Temperatures  Low-noise Amplifiers  Sige Heterojunction Bipolar Transistor (Hbt)  Superconducting Single-photon Detectors  Timing Jitter