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A 4μm Diameter SPAD Using Less-doped N-Well Guard Ring in Baseline 65nm CMOS Journal article
Lu, X., Law, M. K., Jiang, Y., Zhao, X., Mak, P. I., Martins, R. P.. A 4μm Diameter SPAD Using Less-doped N-Well Guard Ring in Baseline 65nm CMOS[J]. IEEE Transactions on Electron Devices, 2020, 2223-2225.
Authors:  Lu, X.;  Law, M. K.;  Jiang, Y.;  Zhao, X.;  Mak, P. I.; et al.
Favorite |   IF:2.9/2.9 | Submit date：2022/01/25
Baseline CMOS  Premature Lateral Break-Down  Single-Photon Avalanche Diode (SPAD)  Small Pitch  
A 4-μm diameter SPAD using less-doped N-Well guard ring in baseline 65-nm CMOS Journal article
Lu,Xin, Law,Man Kay, Jiang,Yang, Zhao,Xiaojin, Mak,Pui In, Martins,Rui P.. A 4-μm diameter SPAD using less-doped N-Well guard ring in baseline 65-nm CMOS[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67(5), 2223-2225.
Authors:  Lu,Xin;  Law,Man Kay;  Jiang,Yang;  Zhao,Xiaojin;  Mak,Pui In; et al.
Favorite | TC[WOS]:14 TC[Scopus]:16  IF:2.9/2.9 | Submit date：2021/03/04
Baseline Cmos  Premature Lateral Breakdown  Single-photon Avalanche Diode (Spad)  Small Pitch