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Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm Journal article
Sengupta D.K., Jackson S.L., Curtis A.P., Fang W., Malin J.I., Horton T.U., Hartman Q., Kuo H.C., Thomas S., Miller J., Hsieh K.C., Adesida I., Chuang S.L., Feng M., Stillman G.E., Chang Y.C., Wu W., Tucker J., Chen H., Gibson J.M., Mazumder J., Li L., Liu H.C.. Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm[J]. Journal of Electronic Materials, 1997, 26(12), 1376-1381.
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.; et al.
Favorite | TC[WOS]:7 TC[Scopus]:7 | Submit date：2019/04/08
Gas Source Molecular Beam Epitaxy (Gsmbe)  Inp/ingaas  Quantum-well Infrared Photodectors (Qwips)  
Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm Journal article
Sengupta D.K., Jackson S.L., Curtis A.P., Fang W., Malin J.I., Horton T.U., Hartman Q., Kuo H.C., Thomas S., Miller J., Hsieh K.C., Adesida I., Chuang S.L., Feng M., Stillman G.E., Chang Y.C., Wu W., Tucker J., Chen H., Gibson J.M., Mazumder J., Li L., Liu H.C.. Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm[J]. Journal of Electronic Materials, 1997, 26(12), 1376-1381.
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.; et al.
Favorite | TC[WOS]:7 TC[Scopus]:7 | Submit date：2019/04/08
Gas Source Molecular Beam Epitaxy (Gsmbe)  Inp/ingaas  Quantum-well Infrared Photodectors (Qwips)  
Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors Journal article
Sengupta D.K., Fang W., Malin J.I., Curtis A.P., Horton T., Kuo H.C., Turnbull D., Lin C.H., Li J., Hsieh K.C., Chuang S.L., Adesida I., Feng M., Bishop S.G., Stillman G.E., Gibson J.M., Chen H., Mazumder J., Liu H.C.. Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors[J]. Journal of Electronic Materials, 1997, 26(1), 43-51.
Authors:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Curtis A.P.;  Horton T.; et al.
Favorite | TC[WOS]:2 TC[Scopus]:3 | Submit date：2019/04/08
Dark Current Characteristics  Multiple Quantum Well Infrared Photodectors (Qwips)  Quantum Efficiency  Rapid Thermal Annealing (Rta)  Red Shift  
Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors Journal article
Sengupta D.K., Fang W., Malin J.I., Curtis A.P., Horton T., Kuo H.C., Turnbull D., Lin C.H., Li J., Hsieh K.C., Chuang S.L., Adesida I., Feng M., Bishop S.G., Stillman G.E., Gibson J.M., Chen H., Mazumder J., Liu H.C.. Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors[J]. Journal of Electronic Materials, 1997, 26(1), 43-51.
Authors:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Curtis A.P.;  Horton T.; et al.
Favorite | TC[WOS]:2 TC[Scopus]:3 | Submit date：2019/04/08
Dark Current Characteristics  Multiple Quantum Well Infrared Photodectors (Qwips)  Quantum Efficiency  Rapid Thermal Annealing (Rta)  Red Shift