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Infrared Response and Optoelectronic Memory Device Fabrication Based on Epitaxial VO 2 Film Journal article
Fan L., Chen Y., Liu Q., Chen S., Zhu L., Meng Q., Wang B., Zhang Q., Ren H., Zou C.. Infrared Response and Optoelectronic Memory Device Fabrication Based on Epitaxial VO 2 Film[J]. ACS Applied Materials and Interfaces, 2016, 8(48), 32971-32977.
Authors:  Fan L.;  Chen Y.;  Liu Q.;  Chen S.;  Zhu L.; et al.
Favorite | TC[WOS]:79 TC[Scopus]:83 | Submit date:2019/04/08
Infrared Transmission  Memory Device  N-gan  Phase Transition Modulation  Vanadium Dioxide