In this work, high-quality VO epitaxial films were prepared on high-conductivity n-GaN (0001) crystal substrates via an oxide molecular beam epitaxy method. By fabricating a two-terminal VO /GaN film device, we observed that the infrared transmittance and resistance of VO films could be dynamically controlled by an external bias voltage. Based on the hysteretic switching effect of VO in infrared range, an optoelectronic memory device was achieved. This memory device was operated under the "electrical writing-optical reading" mode, which shows promising applications in VO -based optoelectronic device in the future.