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A 0.45-V 3.3-µW Resistor-Based Temperature Sensor Achieving 10mK Resolution in 65-nm CMOS Conference paper
Lei, K. M., Mak, P. I., Martins, R. P.. A 0.45-V 3.3-µW Resistor-Based Temperature Sensor Achieving 10mK Resolution in 65-nm CMOS[C], 2022.
Authors:  Lei, K. M.;  Mak, P. I.;  Martins, R. P.
Favorite |  | Submit date：2022/08/18
CMOS  frequency-locked loop  Internet-of-Things (IoT)  temperature sensor  thermistor  ultra-low-voltage.  
A 0.45-V 3.3-μW Resistor-Based Temperature Sensor Achieving 10mK Resolution in 65-nm CMOS Conference paper
Ka-Meng Lei, Pui-In Mak, Rui P. Martins. A 0.45-V 3.3-μW Resistor-Based Temperature Sensor Achieving 10mK Resolution in 65-nm CMOS[C]:IEEE, 2021, 127-128.
Authors:  Ka-Meng Lei;  Pui-In Mak;  Rui P. Martins
Favorite | TC[Scopus]:2 | Submit date：2022/05/13
Cmos  Frequency-locked Loop  Internet-of-things (Iot)  Temperature Sensor  Thermistor  Ultra-low-voltage  
A Time-Domain CMOS Temperature Sensor Using Gated Ring Oscillator with Linearity Optimization Conference paper
Liu, Yangyang, Lei, Yu, Law, Man Kay, Veigas, Bruno, Mak, Pui In, Martins, Rui P.. A Time-Domain CMOS Temperature Sensor Using Gated Ring Oscillator with Linearity Optimization[C], 2021.
Authors:  Liu, Yangyang;  Lei, Yu;  Law, Man Kay;  Veigas, Bruno;  Mak, Pui In; et al.
Favorite | TC[Scopus]:3 | Submit date：2021/09/20
Bjt  Cmos Temperature Sensor  Gated Ring Oscillator  Linearity Optimization  Time Domain  
A -12.3 dBm UHF Passive RFID Sense Tag for Grid Thermal Monitoring Journal article
Wang,Bo, Law,Man Kay, Yi,Jun, Tsui,Chi Ying, Bermak,Amine. A -12.3 dBm UHF Passive RFID Sense Tag for Grid Thermal Monitoring[J]. IEEE Transactions on Industrial Electronics, 2019, 66(11), 8811-8820.
Authors:  Wang,Bo;  Law,Man Kay;  Yi,Jun;  Tsui,Chi Ying;  Bermak,Amine
Favorite | TC[WOS]:20 TC[Scopus]:23  IF:7.5/8.0 | Submit date：2021/03/11
Antimetal Antenna  Cmos Temperature Sensor  Grid Thermal Monitoring  Radio-frequency Identification Tag (Rfid) Temperature Sense Tag  Relaxation Clock Generator  Ultra-high-frequency (Uhf) Rfid  
A -12.3 dBm Passive Sense Tag for Grid Thermal Monitoring Journal article
Wang, B., Law, M. K., Yi, J., Tsui, C. Y., Bermak, A.. A -12.3 dBm Passive Sense Tag for Grid Thermal Monitoring[J]. A −12.3 dBm UHF Passive RFID Sense Tag for Grid Thermal Monitoring, 2019, 8811-8820.
Authors:  Wang, B.;  Law, M. K.;  Yi, J.;  Tsui, C. Y.;  Bermak, A.
Favorite | TC[WOS]:20 TC[Scopus]:23  IF:7.5/8.0 | Submit date：2022/08/04
Antimetal Antenna  Cmos Temperature Sensor  Grid Thermal Monitoring  Radio-frequency Identification Tag (Rfid) Temperature Sense Tag  Relaxation Clock Generator  Ultra-high-frequency (Uhf) Rfid  
A curvature compensated bjt-based time-domain temperature sensor with an inaccuracy of ±0.7°C from -40°C to 125°C Conference paper
Xu,Yukun, Law,Man Kay, Mak,Pui In, Martins,Rui P.. A curvature compensated bjt-based time-domain temperature sensor with an inaccuracy of ±0.7°C from -40°C to 125°C[C], 2019.
Authors:  Xu,Yukun;  Law,Man Kay;  Mak,Pui In;  Martins,Rui P.
Favorite | TC[WOS]:0 TC[Scopus]:3 | Submit date：2021/03/09
Cmos Temperature Sensor  Curvature Compensation  Low-power  Time Domain  
Process compensated bipolar junction transistor-based CMOS temperature sensor with a +/- 1.5 degrees C (3 sigma) batch-to-batch inaccuracy Journal article
Sun, Dapeng, Zhang, Tan-Tan, Law, Man-Kay, Mak, Pui-In, Martins, Rui Paulo. Process compensated bipolar junction transistor-based CMOS temperature sensor with a +/- 1.5 degrees C (3 sigma) batch-to-batch inaccuracy[J]. ELECTRONICS LETTERS, 2018, 54(22), 1270-1271.
Authors:  Sun, Dapeng;  Zhang, Tan-Tan;  Law, Man-Kay;  Mak, Pui-In;  Martins, Rui Paulo
Favorite | TC[WOS]:1 TC[Scopus]:1  IF:0.7/0.9 | Submit date：2019/01/17
Resistors  Calibration  Cmos Integrated Circuits  Bipolar Transistors  Temperature Sensors  First-batch-only Calibration Parameters  Batch-to-batch Inaccuracy  Piecewise Bjt Process  Compensation Property  Base Recombination Current  Base-emitter Voltage  Cmos Temperature Sensor  Process Compensated Bjt  Intra-die Variation  Spread Compensation Property  On-chip Resistors  Inter-die Variation  Current 3  0 Mua  Voltage 1  2 v  Temperature-40 Degc To 125 Degc  Size 0  036 Mm  
A 10.6 pJ.K-2 Resolution FoM Temperature Sensor Using Astable Multivibrator Journal article
Wang, Bo, Law, Man-Kay, Tsui, Chi-Ying, Bermak, Amine. A 10.6 pJ.K-2 Resolution FoM Temperature Sensor Using Astable Multivibrator[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2018, 65(7), 869-873.
Authors:  Wang, Bo;  Law, Man-Kay;  Tsui, Chi-Ying;  Bermak, Amine
Favorite | TC[WOS]:16 TC[Scopus]:16  IF:4.0/3.7 | Submit date：2018/10/30
Cmos Temperature Sensor  Peak Current  Self-regulated Bgr  Bipolar  Emitter-coupled Astable Multivibrator  
A 10.6 pJ·K2 Resolution FoM Temperature Sensor Using Astable Multivibrator Journal article
Wang B., Law M.-K., Tsui C.-Y., Bermak A.. A 10.6 pJ·K2 Resolution FoM Temperature Sensor Using Astable Multivibrator[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2018, 65(7), 869-873.
Authors:  Wang B.;  Law M.-K.;  Tsui C.-Y.;  Bermak A.
Favorite | TC[WOS]:16 TC[Scopus]:16 | Submit date：2019/02/14
Bipolar  Cmos Temperature Sensor  Emitter-coupled Astable Multivibrator  Peak Current  Self-regulated Bgr  
Ultra-low Power/Energy Efficient High Accuracy CMOS Temperature Sensors Book chapter
出自: Selected Topics in Power, RF, and Mixed-Signal ICs:River Publishers, 2017, 页码:229-266
Authors:  Law, M. K.
Favorite |  | Submit date：2022/08/09
Ultra-low Power  Energy Efficiency  High Accuracy  Cmos Temperature Sensor  Calibration  Bjt  Mosfet