| Status | 已發表Published |
| A 0.45-V 3.3-µW Resistor-Based Temperature Sensor Achieving 10mK Resolution in 65-nm CMOS | |
Lei, K. M.  ; Mak, P. I.; Martins, R. P.
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| 2022 | |
| Source Publication | IEEE International Conference on Integrated Circuits, Technologies and Applications
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| Abstract | A 0.45-V resistor-based temperature sensor for energy-harvested Internet-of-Things device is presented. The sub-0.5-V operation is achieved by introducing a digital-intensive frequency-locked loop to convert the temperature-sensitive resistance to timing information. To overcome the high on-resistance of the transistors at sub-0.5 V, we apply gate-bulk-connected transistors to improve the on-resistance while safeguarding their leakages in the off-state. Simulated in a 65-nm CMOS process, the temperature sensor consumes 3.3 µW at room temperature. With a 10-ms conversion time, the temperature sensor can achieve a resolution of 10 mK, resulting in a resolution FoM of 3.3 pJ·K2. |
| Keyword | CMOS frequency-locked loop Internet-of-Things (IoT) temperature sensor thermistor ultra-low-voltage. |
| Language | 英語English |
| The Source to Article | PB_Publication |
| PUB ID | 62816 |
| Document Type | Conference paper |
| Collection | INSTITUTE OF MICROELECTRONICS |
| Corresponding Author | Lei, K. M. |
| Recommended Citation GB/T 7714 | Lei, K. M.,Mak, P. I.,Martins, R. P.. A 0.45-V 3.3-µW Resistor-Based Temperature Sensor Achieving 10mK Resolution in 65-nm CMOS[C], 2022. |
| APA | Lei, K. M.., Mak, P. I.., & Martins, R. P. (2022). A 0.45-V 3.3-µW Resistor-Based Temperature Sensor Achieving 10mK Resolution in 65-nm CMOS. IEEE International Conference on Integrated Circuits, Technologies and Applications. |
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