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Quantized topological charges of antiferroelectric skyrmions in two-dimensional multiferroic materials Journal article
Liu, Zhaosen, Ian, Hou. Quantized topological charges of antiferroelectric skyrmions in two-dimensional multiferroic materials[J]. Physica E: Low-Dimensional Systems and Nanostructures, 2024, 159, 115912.
Authors:  Liu, Zhaosen;  Ian, Hou
Favorite | TC[WOS]:0 TC[Scopus]:0  IF:2.9/2.7 | Submit date：2024/05/16
Antiferroelectric Skyrmions  Multiferroic Materials  Quantized Topological Charges  Quantum Simulation  
Van der Waals Antiferroelectric Magnetic Tunnel Junction: A First-Principles Study of a CrSe2/CuInP2S6/CrSe2 Junction Journal article
Bai, Hua, Li, Xinyi, Pan, Hui, He, Pimo, Xu, Zhu An, Lu, Yunhao. Van der Waals Antiferroelectric Magnetic Tunnel Junction: A First-Principles Study of a CrSe2/CuInP2S6/CrSe2 Junction[J]. ACS Applied Materials and Interfaces, 2021, 13(50), 60200-60208.
Authors:  Bai, Hua;  Li, Xinyi;  Pan, Hui;  He, Pimo;  Xu, Zhu An; et al.
Favorite | TC[WOS]:15 TC[Scopus]:16  IF:8.3/8.7 | Submit date：2022/01/14
Antiferroelectric  Ferroelectric  Magnetic  Tunnel Junctions  Two-dimensional  
Phase stability and pyroelectricity of antiferroelectric PLZST oxide Journal article
Chan W.-H., Xu Z., Zhai J., Colla E.V., Chen H.. Phase stability and pyroelectricity of antiferroelectric PLZST oxide[J]. Journal of Electroceramics, 2008, 21(1-4 SPEC. ISS.), 145-148.
Authors:  Chan W.-H.;  Xu Z.;  Zhai J.;  Colla E.V.;  Chen H.
Favorite | TC[WOS]:16 TC[Scopus]:16 | Submit date：2019/04/08
Antiferroelectric  Frequency Dispersion  Plzst Ceramics  Pyroelectric Properties  Tunability  
Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O3 and Pb (Nb,Zr,Sn,Ti)O3 antiferroelectric thin films deposited on LaNiO 3-buffered silicon substrates by sol-gel processing Journal article
Zhai J., Shen B., Yao X., Xu Z., Li X., Chen H.. Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O3 and Pb (Nb,Zr,Sn,Ti)O3 antiferroelectric thin films deposited on LaNiO 3-buffered silicon substrates by sol-gel processing[J]. Journal of Sol-Gel Science and Technology, 2007, 42(3), 369-373.
Authors:  Zhai J.;  Shen B.;  Yao X.;  Xu Z.;  Li X.; et al.
Favorite | TC[WOS]:10 TC[Scopus]:11 | Submit date：2019/04/08
Antiferroelectric  Electrical Property  Phase Transformation  Sol-gel Process  Thin Film  
Effect of the orientation on the ferroelectric-antiferroelectric behavior of sol-gel deposited (Pb,Nb)(Zr,Sn,Ti)O3 thin films Journal article
Zhai J., Li X., Chen H.. Effect of the orientation on the ferroelectric-antiferroelectric behavior of sol-gel deposited (Pb,Nb)(Zr,Sn,Ti)O3 thin films[J]. Thin Solid Films, 2004, 446(2), 200-204.
Authors:  Zhai J.;  Li X.;  Chen H.
Favorite | TC[WOS]:21 TC[Scopus]:21 | Submit date：2019/04/08
Antiferroelectric Thin Film  Electric Properties (Section a)  Phase Transitions  Structural Properties  
Growth and characterization of PNZST thin films Conference paper
Zhai J., Li X., Yao Y., Chen H.. Growth and characterization of PNZST thin films[C], 2003, 230-233.
Authors:  Zhai J.;  Li X.;  Yao Y.;  Chen H.
Favorite | TC[WOS]:12 TC[Scopus]:13 | Submit date：2019/04/08
Antiferroelectric Thin Film  Dielectric Properties  Microstructure  Pnzst  Sol-gel Technique