Growth and characterization of PNZST thin films

doi:10.1016/S0921-5107(02)00457-9

Residential College	false
Status	已發表Published
	Growth and characterization of PNZST thin films
	Zhai J.; Li X.; Yao Y.; Chen H.
	2003-05-25
Conference Name	8th International-Union-of-Materials-Research-Societies Conference on Electronic Materials
Source Publication	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	99
Issue	1-3
Pages	230-233
Conference Date	JUN 10-14, 2002
Conference Place	XIAN, PEOPLES R CHINA
Abstract	We have grown and compared microstructures and dielectric properties of PNZST thin films prepared on two different substrates by sol-gel methods. To ensure a complete single-phase perovskite PNZST thin film, a capping layer of PbO must be added to the top surface of the thin film before final heat treatment. Microstructure characterization was examined with X-ray diffraction, scanning and transmission electron microscopy. Dielectric and antiferroelectric properties were investigated as a function of temperature. © 2002 Elsevier Science B.V. All rights reserved.
Keyword	Antiferroelectric Thin Film Dielectric Properties Microstructure Pnzst Sol-gel Technique
DOI	10.1016/S0921-5107(02)00457-9
URL	View the original
Language	英語English
WOS ID	WOS:000184120300053
Scopus ID	2-s2.0-0038039182
Fulltext Access	View Full-Text via DOI View Full-Text via Web of Science View Full-Text via Scopus
Citation statistics
Document Type	Conference paper
Collection	University of Macau
Affiliation	City University of Hong Kong
Recommended Citation GB/T 7714	Zhai J.,Li X.,Yao Y.,et al. Growth and characterization of PNZST thin films[C], 2003, 230-233.
APA	Zhai J.., Li X.., Yao Y.., & Chen H. (2003). Growth and characterization of PNZST thin films. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 99(1-3), 230-233.

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