English | 繁體

Search in the results

UM

Browse/Search Results:  1-2 of 2 Help

Selected(0)Clear Items/Page:    Sort:
Orbital hybridization and defective states of vacancy defects in AlN Journal article
Yan, Xuefei, Wang, Bowen, Yan, Hejin, Huan, Changmeng, Cai, Yongqing, Ke, Qingqing. Orbital hybridization and defective states of vacancy defects in AlN[J]. Materials Today Communications, 2024, 39, 109063.
Authors:  Yan, Xuefei;  Wang, Bowen;  Yan, Hejin;  Huan, Changmeng;  Cai, Yongqing; et al.
Favorite | TC[WOS]:0 TC[Scopus]:1  IF:3.7/3.8 | Submit date：2024/05/16
Aluminum Nitride  Antibonding Coupling  First Principles  Orbital Hybridization  Vacancy  
Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition Journal article
Chen F., Fang X., Wang S., Niu S., Fang F., Fang D., Tang J., Wang X., Liu G., Wei Z.. Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition[J]. Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2016, 45(4).
Authors:  Chen F.;  Fang X.;  Wang S.;  Niu S.;  Fang F.; et al.
Favorite | TC[Scopus]:0 | Submit date：2019/04/08
Aluminum Nitride  Crystallization  Deposition Temperature  Growth Rate  Plasma Enhanced Atomic Layer Deposition  Surface Roughness