Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition

doi:10.3788/IRLA201645.0421001

UM > INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING

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	Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition
	Chen F.1; Fang X.1; Wang S.3 ; Niu S.1; Fang F.2; Fang D.1; Tang J.1; Wang X.1; Liu G.1; Wei Z.1
	2016-04-25
Source Publication	Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering
ISSN	1007-2276
Volume	45 Issue:4
Abstract	The influence of growth temperature on the properties of aluminum nitride (AlN) films are grown by plasma enhanced atomic layer deposition (PEALD) at different deposition temperature. NH3 and trimethylaluminum (TMA) were used as precursors, 200, 500, 800, 1000, 1500 cycles AlN layers were deposited at 300℃, 350℃ and 370℃, the growth rate, crystallinity and surface roughness were discussed. Deposition rate and crystallization of the films increased whereas the surface roughness decreased in the growth temperature range of 300-370℃.
Keyword	Aluminum Nitride Crystallization Deposition Temperature Growth Rate Plasma Enhanced Atomic Layer Deposition Surface Roughness
DOI	10.3788/IRLA201645.0421001
URL	View the original
Language	英語English
Scopus ID	2-s2.0-84971260902
Fulltext Access	View Full-Text via DOI View Full-Text via Scopus
Citation statistics
Document Type	Journal article
Collection	INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Affiliation	1.Changchun University of Science and Technology 2.Nanchang University 3.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
Recommended Citation GB/T 7714	Chen F.,Fang X.,Wang S.,et al. Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition[J]. Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2016, 45(4).
APA	Chen F.., Fang X.., Wang S.., Niu S.., Fang F.., Fang D.., Tang J.., Wang X.., Liu G.., & Wei Z. (2016). Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition. Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 45(4).
MLA	Chen F.,et al."Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition".Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering 45.4(2016).

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