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Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy Journal article
Kuo H.C., Thomas S., Norton T.U., Moser B.G., Stillman G.E., Lin C.H., Chen H.. Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy[J]. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1998, 16(3), 1377-1380.
Authors:  Kuo H.C.;  Thomas S.;  Norton T.U.;  Moser B.G.;  Stillman G.E.; et al.
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