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Band alignment and electrical properties of NiO/β-Ga2O3 heterojunctions with different β-Ga2O3 orientations Journal article
Deng, Yuxin, Yang, Ziqi, Xu, Tongling, Jiang, Huaxing, Ng, Kar Wei, Liao, Chao, Su, Danni, Pei, Yanli, Chen, Zimin, Wang, Gang, Lu, Xing. Band alignment and electrical properties of NiO/β-Ga2O3 heterojunctions with different β-Ga2O3 orientations[J]. Applied Surface Science, 2023, 622, 156917.
Authors:  Deng, Yuxin;  Yang, Ziqi;  Xu, Tongling;  Jiang, Huaxing;  Ng, Kar Wei; et al.
Favorite | TC[WOS]:27 TC[Scopus]:28  IF:6.3/5.9 | Submit date：2023/07/20
Band Alignment  Gallium Oxide  Nickel Oxide  Pn Heterojunction  
1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes with an Ultra-Low Leakage Current below μ A/cm2 Journal article
Lu, Xing, Zhou, Xianda, Jiang, Huaxing, Ng, Kar Wei, Chen, Zimin, Pei, Yanli, Lau, Kei May, Wang, Gang. 1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes with an Ultra-Low Leakage Current below μ A/cm2[J]. IEEE Electron Device Letters, 2020, 41(3), 449-452.
Authors:  Lu, Xing;  Zhou, Xianda;  Jiang, Huaxing;  Ng, Kar Wei;  Chen, Zimin; et al.
Favorite | TC[WOS]:159 TC[Scopus]:168  IF:4.1/4.2 | Submit date：2021/09/17
Breakdown Voltage  Heterojunction  Nio  P-n Diode  Reverse Leakage Current  Β-=ga2o3  
High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric Journal article
Jiang, Huaxing, Liu, Chao, Ng, Kar Wei, Tang, Chak Wah, Lau, Kei May. High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65(12), 5337-5342.
Authors:  Jiang, Huaxing;  Liu, Chao;  Ng, Kar Wei;  Tang, Chak Wah;  Lau, Kei May
Favorite | TC[WOS]:23 TC[Scopus]:27  IF:2.9/2.9 | Submit date：2019/01/17
Iii-nitride  Gate Dielectric  Leakage  Metal-oxide-semiconductor High Electron Mobility Transistors (Moshemts)  Power  Zro2