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GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates Journal article
Sengupta D.K., Fang W., Malin J.I., Li J., Horton T., Curtis A.P., Hsieh K.C., Chuang S.L., Chen H., Feng M., Stillman G.E., Li L., Liu H.C., Bandara K.M.S.V., Gunapala S.D., Wang W.I.. GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates[J]. Applied Physics Letters, 1997, 71(1), 78-80.
Authors:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Li J.;  Horton T.; et al.
Favorite | TC[WOS]:12 TC[Scopus]:11 | Submit date：2019/04/08
Redshifting of a bound-to-continuum GaAs/AIGaAs quantum-well infrared photodetector response via laser annealing Journal article
Sengupta D.K., Horton T., Fang W., Curtis A., Li J., Chuang S.L., Chen H., Feng M., Stillman G.E., Kar A., Mazumder J., Li L., Liu H.C.. Redshifting of a bound-to-continuum GaAs/AIGaAs quantum-well infrared photodetector response via laser annealing[J]. Applied Physics Letters, 1997, 70(26), 3573-3575.
Authors:  Sengupta D.K.;  Horton T.;  Fang W.;  Curtis A.;  Li J.; et al.
Favorite | TC[WOS]:12 TC[Scopus]:14 | Submit date：2019/04/08
Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors Journal article
Sengupta D.K., Fang W., Malin J.I., Curtis A.P., Horton T., Kuo H.C., Turnbull D., Lin C.H., Li J., Hsieh K.C., Chuang S.L., Adesida I., Feng M., Bishop S.G., Stillman G.E., Gibson J.M., Chen H., Mazumder J., Liu H.C.. Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors[J]. Journal of Electronic Materials, 1997, 26(1), 43-51.
Authors:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Curtis A.P.;  Horton T.; et al.
Favorite | TC[WOS]:2 TC[Scopus]:3 | Submit date：2019/04/08
Dark Current Characteristics  Multiple Quantum Well Infrared Photodectors (Qwips)  Quantum Efficiency  Rapid Thermal Annealing (Rta)  Red Shift  
Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors Journal article
Sengupta D.K., Fang W., Malin J.I., Curtis A.P., Horton T., Kuo H.C., Turnbull D., Lin C.H., Li J., Hsieh K.C., Chuang S.L., Adesida I., Feng M., Bishop S.G., Stillman G.E., Gibson J.M., Chen H., Mazumder J., Liu H.C.. Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors[J]. Journal of Electronic Materials, 1997, 26(1), 43-51.
Authors:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Curtis A.P.;  Horton T.; et al.
Favorite | TC[WOS]:2 TC[Scopus]:3 | Submit date：2019/04/08
Dark Current Characteristics  Multiple Quantum Well Infrared Photodectors (Qwips)  Quantum Efficiency  Rapid Thermal Annealing (Rta)  Red Shift