English | 繁體

Search in the results

UM

Browse/Search Results:  1-5 of 5 Help

Selected(0)Clear Items/Page:    Sort:
Preparation and electrical properties of (100) Preferred (Ba,Sr)TiO 3 bilayer thin films derived from pulse laser deposition method Conference paper
Lu S.G., Friddle P.A., Xu Z.K., Siu G.G., Chen H., Wong K.H., Mak C.L.. Preparation and electrical properties of (100) Preferred (Ba,Sr)TiO 3 bilayer thin films derived from pulse laser deposition method[C], 2005, 849-852.
Authors:  Lu S.G.;  Friddle P.A.;  Xu Z.K.;  Siu G.G.;  Chen H.; et al.
Favorite |  | Submit date：2019/04/08
Barium strontium titanate  Preferred orientation  Pulse laser deposition  Thin film  
Growth and dielectric properties of Pb(ScTa)1-xTi xO3 (PSTT) thin films by MOCVD method Journal article
Lin C.-H., Friddle P.A., Ma C.-H., Chen H.. Growth and dielectric properties of Pb(ScTa)1-xTi xO3 (PSTT) thin films by MOCVD method[J]. Tamkang Journal of Science and Engineering, 2002, 5(1), 1-6.
Authors:  Lin C.-H.;  Friddle P.A.;  Ma C.-H.;  Chen H.
Favorite |  | Submit date：2019/04/08
Dielectric Properties  MOCVD  PSTT Relaxor Ferroelectric  Thin Films  
Effect of composition and growth temperature on the dielectric properties of Pb(ScTa)1-xTixO3 (PSTT) thin films grown by MOCVD Conference paper
Lin C.H., Friddle P.A., Ma C.H., Chen H.. Effect of composition and growth temperature on the dielectric properties of Pb(ScTa)1-xTixO3 (PSTT) thin films grown by MOCVD[C], 2001, 229-238.
Authors:  Lin C.H.;  Friddle P.A.;  Ma C.H.;  Chen H.
Favorite | TC[WOS]:1 TC[Scopus]:1 | Submit date：2019/04/08
Composition  Dielectric Dispersion  Growth Temperature  Relaxor  
Effects of thickness on the electrical properties of metalorganic chemical vapor deposited Pb(Zr, Ti)O3 (25-100 nm) thin films on LaNiO3 buffered Si Journal article
Lin C.H., Friddle P.A., Ma C.H., Daga A., Chen H.. Effects of thickness on the electrical properties of metalorganic chemical vapor deposited Pb(Zr, Ti)O3 (25-100 nm) thin films on LaNiO3 buffered Si[J]. Journal of Applied Physics, 2001, 90(3), 1509-1515.
Authors:  Lin C.H.;  Friddle P.A.;  Ma C.H.;  Daga A.;  Chen H.
Favorite | TC[WOS]:60 TC[Scopus]:61 | Submit date：2019/04/08
Electrical characteristics of 25 nm Pr(ZrTi)O3 thin films grown on Si by metalorganic chemical vapor deposition Journal article
Lin C.H., Friddle P.A., Lu X., Chen H., Kim Y., Wu T.B.. Electrical characteristics of 25 nm Pr(ZrTi)O3 thin films grown on Si by metalorganic chemical vapor deposition[J]. Journal of Applied Physics, 2000, 88(4), 2157-2159.
Authors:  Lin C.H.;  Friddle P.A.;  Lu X.;  Chen H.;  Kim Y.; et al.
Favorite | TC[WOS]:10 TC[Scopus]:10 | Submit date：2019/04/08