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High frequency S parameters characterization of back-gate carbon nanotube field-effect transistors Conference paper
Huo X., Zhang M., Chan P.C.H., Liang Q., Tang Z.K.. High frequency S parameters characterization of back-gate carbon nanotube field-effect transistors[C], 2004, 691-694.
Authors:  Huo X.;  Zhang M.;  Chan P.C.H.;  Liang Q.;  Tang Z.K.
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