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A 4x Time-Domain Interpolation 6-bit 3.4GS/s 12.6mW Flash ADC in 65nm CMOS Journal article
Liu, J., Chan, C.H., Sin, S. W., U, S.P., Martins, R. P.. A 4x Time-Domain Interpolation 6-bit 3.4GS/s 12.6mW Flash ADC in 65nm CMOS[J]. Journal of Semiconductor Technology and Science, 2016, 395-404.
Authors:  Liu, J.;  Chan, C.H.;  Sin, S. W.;  U, S.P.;  Martins, R. P.
Favorite |   IF:0.5/0.3 | Submit date：2022/01/24
Flash ADC  time comparator  4x time-domain interpolation  SR-latch  
A 4x time-domain interpolation 6-bit 3.4 Gs/s 12.6 mw flash ADC in 65 nm CMOS Journal article
Jianwei Liu, Chi-Hang Chan, Sai-Weng Sin, Seng-Pan U, Rui Paulo Martins. A 4x time-domain interpolation 6-bit 3.4 Gs/s 12.6 mw flash ADC in 65 nm CMOS[J]. Journal of Semiconductor Technology and Science, 2016, 16(4), 395-404.
Authors:  Jianwei Liu;  Chi-Hang Chan;  Sai-Weng Sin;  Seng-Pan U;  Rui Paulo Martins
Favorite | TC[WOS]:1 TC[Scopus]:1 | Submit date：2019/02/11
4x Time-domain Interpolation  Flash Adc  Sr-latch  Time Comparator  
Electrical properties of N-doped ZnO grown on sapphire by P-MBE Journal article
Wang X., Lu Y.M., Shen D.Z., Zhang Z.Z., Li B.H., Yao B., Zhang J.Y., Zhao D.X., Fan X.W., Tang Z.K.. Electrical properties of N-doped ZnO grown on sapphire by P-MBE[J]. Semiconductor Science and Technology, 2007, 22(2), 65-69.
Authors:  Wang X.;  Lu Y.M.;  Shen D.Z.;  Zhang Z.Z.;  Li B.H.; et al.
Favorite | TC[WOS]:6 TC[Scopus]:7 | Submit date：2019/04/08