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The Relaxation of Oxygen Vacancies Induced Hysteresis Behavior of Ferroelectric Negative Capacitance Field-Effect Transistors Journal article
Liu, Bingtao, Huan, Changmeng, Cai, Yongqing, Ke, Qingqing. The Relaxation of Oxygen Vacancies Induced Hysteresis Behavior of Ferroelectric Negative Capacitance Field-Effect Transistors[J]. Journal of Electronic Materials, 2024, 53(11), 7057-7064.
Authors:  Liu, Bingtao;  Huan, Changmeng;  Cai, Yongqing;  Ke, Qingqing
Favorite | TC[WOS]:0 TC[Scopus]:0  IF:2.2/1.9 | Submit date：2024/10/10
Ferroelectric Negative Capacitance  Oxygen Vacancies  High-mobility Ions  Hysteresis-free  
Investigating the Reliability of a Negative Capacitance Field Effect Transistor Regarding the Electric Field Across the Oxide Layer Journal article
Liu, Bingtao, Sun, Hanxi, Huan, Changmeng, Jia, Renxu, Cai, Yongqing, Ke, Qingqing. Investigating the Reliability of a Negative Capacitance Field Effect Transistor Regarding the Electric Field Across the Oxide Layer[J]. Journal of Electronic Materials, 2023, 52, 3180-3187.
Authors:  Liu, Bingtao;  Sun, Hanxi;  Huan, Changmeng;  Jia, Renxu;  Cai, Yongqing; et al.
Favorite | TC[WOS]:2 TC[Scopus]:2  IF:2.2/1.9 | Submit date：2023/06/07
Electric Field Distribution  Negative Capacitance  Oxide Reliability  Tcad  
Observation of Whispering Gallery Modes in InGaN/GaN Multi-Quantum Well Microdisks with Ag Plasmonic Nanoparticles on Si Pedestals Journal article
Lee, Kang Jea, Dinh, Duc Anh, Hoa, Huynh Tran My, Phuong, Pham Hoai, Nguyen, Hoang Hung, Hui, Kwan San, Hui, Kwun Nam, Cuong, Tran Viet. Observation of Whispering Gallery Modes in InGaN/GaN Multi-Quantum Well Microdisks with Ag Plasmonic Nanoparticles on Si Pedestals[J]. Journal of Electronic Materials, 2022, 51(5), 2054-2061.
Authors:  Lee, Kang Jea;  Dinh, Duc Anh;  Hoa, Huynh Tran My;  Phuong, Pham Hoai;  Nguyen, Hoang Hung; et al.
Favorite | TC[WOS]:1 TC[Scopus]:1  IF:2.2/1.9 | Submit date：2022/05/13
Microdisks  Whispering Gallery Modes  Ingan/gan Multi-quantum Wells  Gan Multi-quantum Wells  
Metal halide perovskites: stability and sensing-ability Journal article
Zhaohua Zhu, Qian Sun, Zhipeng Zhang, Jie Dai, Guichuan Xing, Shaozhou Li, Xiao Huang, Wei Huang. Metal halide perovskites: stability and sensing-ability[J]. Journal of Materials Chemistry C: Materials for optical and electronic devices, 2018, 6(38), 10121-10137.
Authors:  Zhaohua Zhu;  Qian Sun;  Zhipeng Zhang;  Jie Dai;  Guichuan Xing; et al.
Favorite | TC[WOS]:143 TC[Scopus]:150  IF:5.7/6.0 | Submit date：2019/04/29
A First-Principles Study on the Structural and Electronic Properties of Sn-Based Organic–Inorganic Halide Perovskites Journal article
ZI-QIAN MA, HUI PAN, PAK KIN WONG. A First-Principles Study on the Structural and Electronic Properties of Sn-Based Organic–Inorganic Halide Perovskites[J]. Journal of Electronic Materials, 2016, 45(11), 5956-5966.
Authors:  ZI-QIAN MA;  HUI PAN;  PAK KIN WONG
Favorite | TC[WOS]:30 TC[Scopus]:31  IF:2.2/1.9 | Submit date：2019/02/13
Carrier Effective Mass  Electronic Properties  First-principles Calculation  Sn-based Organic–inorganic Halide Perovskites  Solar-energy Harvesting  
A First-Principles Study on the Structural and Electronic Properties of Sn-Based Organic-Inorganic Halide Perovskites Journal article
Ma, ZQ, Pan, H., Wong, Pak Kin. A First-Principles Study on the Structural and Electronic Properties of Sn-Based Organic-Inorganic Halide Perovskites[J]. Journal of Electronic Materials, 2016, 45(11), 5956-5966.
Authors:  Ma, ZQ;  Pan, H.;  Wong, Pak Kin
Favorite | TC[WOS]:30 TC[Scopus]:31  IF:2.2/1.9 | Submit date：2022/08/30
Sn-based Organic-inorganic Halide Perovskites  Solar-energy Harvesting  Electronic Properties  Carrier Effective Mass  And First-principles Calculation  
Growth and characterizations of GaN-Based LEDs grown on wet-etched stripe-patterned sapphire substrates Journal article
Ng K.W., Hwang J.M., Lau K.M.. Growth and characterizations of GaN-Based LEDs grown on wet-etched stripe-patterned sapphire substrates[J]. Journal of Electronic Materials, 2008, 37(10), 1560-1564.
Authors:  Ng K.W.;  Hwang J.M.;  Lau K.M.
Favorite | TC[WOS]:3 TC[Scopus]:4 | Submit date：2019/04/08
Gan  Groove  Light-emitting Diode (Led)  Patterned Sapphire Substrate  Stripe  Wet Etch  
Characterization study of time- and temperature-dependent mechanical behavior of polyimide materials in electronic packaging applications Journal article
Kuo C.-T., Yip M.-C., Chiang K.-N., Tsou C.. Characterization study of time- and temperature-dependent mechanical behavior of polyimide materials in electronic packaging applications[J]. Journal of Electronic Materials, 2005, 34(3), 272-281.
Authors:  Kuo C.-T.;  Yip M.-C.;  Chiang K.-N.;  Tsou C.
Favorite | TC[WOS]:13 TC[Scopus]:15 | Submit date：2019/04/08
Creep  Fatigue  Polyimide Films  Strain Rate  Thermo-mechanical Testing  
Mechanical properties and intermetallic compound formation at the Sn/Ni and Sn-0.7wt.%Cu/Ni joints Journal article
Chen S.-W., Lee S.-W., Yip M.-C.. Mechanical properties and intermetallic compound formation at the Sn/Ni and Sn-0.7wt.%Cu/Ni joints[J]. Journal of Electronic Materials, 2003, 32(11), 1284-1289.
Authors:  Chen S.-W.;  Lee S.-W.;  Yip M.-C.
Favorite | TC[WOS]:35 TC[Scopus]:41 | Submit date：2019/04/08
Interfacial Reactions  Mechanical Properties  Ni/sn/ni  Sn-cu Solder  
Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors Journal article
Sengupta D.K., Fang W., Malin J.I., Curtis A.P., Horton T., Kuo H.C., Turnbull D., Lin C.H., Li J., Hsieh K.C., Chuang S.L., Adesida I., Feng M., Bishop S.G., Stillman G.E., Gibson J.M., Chen H., Mazumder J., Liu H.C.. Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors[J]. Journal of Electronic Materials, 1997, 26(1), 43-51.
Authors:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Curtis A.P.;  Horton T.; et al.
Favorite | TC[WOS]:2 TC[Scopus]:3 | Submit date：2019/04/08
Dark Current Characteristics  Multiple Quantum Well Infrared Photodectors (Qwips)  Quantum Efficiency  Rapid Thermal Annealing (Rta)  Red Shift