English | 繁體

Search in the results

UM

Browse/Search Results:  1-8 of 8 Help

Selected(0)Clear Items/Page:    Sort:
Broadband Noise Characterization of SiGe HBTs Down to 4K Conference paper
Jad Benserhir, Yating Zou, PENG YATAO, Hung Chi Han, Edoardo Charbon. Broadband Noise Characterization of SiGe HBTs Down to 4K[C]:Institute of Electrical and Electronics Engineers Inc., 2024.
Authors:  Jad Benserhir;  Yating Zou;  PENG YATAO;  Hung Chi Han;  Edoardo Charbon
Adobe PDF | Favorite | TC[WOS]:0 TC[Scopus]:0 | Submit date：2024/07/08
1/f Noise  Flicker Noise Coefficient  Low Noise Analysis  Low-frequency Noise  Sige Bicmos Technology  
A Switchless Dual-core Triple-Mode VCO Achieving 7.1-to-15.7 GHz Frequency Tuning Range and 202.1 dBc/Hz Peak FoM at 3.7 Kelvin Conference paper
Yue Wu#,, PENG YATAO, Benhao Huo, Jun Yin, Rui P. Martins, Pui In Mak. A Switchless Dual-core Triple-Mode VCO Achieving 7.1-to-15.7 GHz Frequency Tuning Range and 202.1 dBc/Hz Peak FoM at 3.7 Kelvin[C]:Institute of Electrical and Electronics Engineers Inc., 2024, 243 - 246.
Authors:  Yue Wu#,;  PENG YATAO;  Benhao Huo;  Jun Yin;  Rui P. Martins; et al.
Adobe PDF | Favorite | TC[WOS]:0 TC[Scopus]:0 | Submit date：2024/07/08
Cryogenic Cmos  Frequency Tuning Range  Mode-switching  Quantum Interface  Switch-less  Vco  
A SAW-less 3FLO-Suppression RF Transmitter with a Transformer-Based N-Path Switched-Capacitor Modulator Achieving -157.6dBc/Hz Output Noise and -61dBc CIM3 Conference paper
Qi, Gengzhen, Guo, Haonan, Mak, Pui In, Li, Yunchu. A SAW-less 3FLO-Suppression RF Transmitter with a Transformer-Based N-Path Switched-Capacitor Modulator Achieving -157.6dBc/Hz Output Noise and -61dBc CIM3[C]:Institute of Electrical and Electronics Engineers Inc., 2024, 259-262.
Authors:  Qi, Gengzhen;  Guo, Haonan;  Mak, Pui In;  Li, Yunchu
Favorite | TC[WOS]:0 TC[Scopus]:0 | Submit date：2024/09/03
Bandpass Filtering  Baseband (Bb)  Cim3  Radio-frequency (Rf)  Saw-less  Switched-capacitor (Sc)  Transformer  Transmitter  
A 124-152 GHz > 15-dBm Psat28-nm CMOS PA Using Chebyshev Artificial-Transmission-Line-Based Matching for Wideband Power Splitting and Combining Conference paper
Jincheng Zhang, Tianxiang Wu, Yong Chen, Junyan Ren, Shunli Ma. A 124-152 GHz > 15-dBm Psat28-nm CMOS PA Using Chebyshev Artificial-Transmission-Line-Based Matching for Wideband Power Splitting and Combining[C], 2022, 187-190.
Authors:  Jincheng Zhang;  Tianxiang Wu;  Yong Chen;  Junyan Ren;  Shunli Ma
Favorite | TC[WOS]:2 TC[Scopus]:5 | Submit date：2023/01/30
Cmos  d Band  Power Amplifier (p a)  Power Combining  Wideband  
A 21.8-41.6GHz Fast-Locking Sub-Sampling PLL with Dead Zone Automatic Controller Achieving 62.7-fs Jitter and-250.3dB FoM Conference paper
Wen Chen, Yiyang Shu, Huizhen Jenny Qian, Jun Yin, Pui-In Mak, Xiang Gao, Xun Luo. A 21.8-41.6GHz Fast-Locking Sub-Sampling PLL with Dead Zone Automatic Controller Achieving 62.7-fs Jitter and-250.3dB FoM[C], 2022, 159-162.
Authors:  Wen Chen;  Yiyang Shu;  Huizhen Jenny Qian;  Jun Yin;  Pui-In Mak; et al.
Favorite | TC[WOS]:8 TC[Scopus]:8 | Submit date：2023/01/30
Fast-locking  Jitter  Millimeter-wave (Mmw)  Sub-sampling Phase-locked Loop (Sspll)  Wideband  
A Sub-0.25pJ/bit 47.6-to-58.8Gb/s Reference-Less FD-Less Single-Loop PAM-4 Bang-Bang CDR with a Deliberately-Current-Mismatch Frequency Acquisition Technique in 28nm CMOS Conference paper
Zhao, Xiaoteng, Chen, Yong, Wang, Lin, Mak, Pui In, Maloberti, Franco, Martins, Rui P.. A Sub-0.25pJ/bit 47.6-to-58.8Gb/s Reference-Less FD-Less Single-Loop PAM-4 Bang-Bang CDR with a Deliberately-Current-Mismatch Frequency Acquisition Technique in 28nm CMOS[C], 2021, 131-134.
Authors:  Zhao, Xiaoteng;  Chen, Yong;  Wang, Lin;  Mak, Pui In;  Maloberti, Franco; et al.
Favorite | TC[WOS]:6 TC[Scopus]:9 | Submit date：2021/09/20
4-level Pulse Amplitude Modulation (Pam-4)  Bang-bang Clock And Data Recovery (Bbcdr)  Charge Pump (Cp)  Cmos  Frequency Detector (Fd)  Half-rate  Negative (Nnc) Net Current  Positive (Pnc)  Reference Less  Single Loop  Zero (Znc)  
A 0.082mm224.5-to-28.3GHz Multi-LC-Tank Fully-Differential VCO Using Two Separate Single-Turn Inductors and a 1D-Tuning Capacitor Achieving 189.4dBc/Hz FOM and 200±50kHz 1/f3PN Corner Conference paper
Guo,Hao, Chen,Yong, Mak,Pui In, Martins,Rui P.. A 0.082mm224.5-to-28.3GHz Multi-LC-Tank Fully-Differential VCO Using Two Separate Single-Turn Inductors and a 1D-Tuning Capacitor Achieving 189.4dBc/Hz FOM and 200±50kHz 1/f3PN Corner[C], 2020, 235-238.
Authors:  Guo,Hao;  Chen,Yong;  Mak,Pui In;  Martins,Rui P.
Favorite | TC[Scopus]:19 | Submit date：2021/03/04
1/f3phase Noise (Pn) Corner  Common Mode (Cm)  Differential Mode (Dm)  Figure-of-merit (Fom)  Impulse Sensitivity Function (Isf)  Multi-lc-tank  One-dimensional (1d) Tuning  Single-turn Inductor  Voltage-controlled Oscillator (Vco)  
An 8.8-GS/s 8b time-interleaved SAR ADC with 50-dB SFDR using complementary dual-loop-assisted buffers in 28nm CMOS Conference paper
Wang X.S., Chan C.-H., Du J., Wong C.-H., Li Y., Du Y., Kuan Y.-C., Hu B., Chang M.-C.F.. An 8.8-GS/s 8b time-interleaved SAR ADC with 50-dB SFDR using complementary dual-loop-assisted buffers in 28nm CMOS[C], 2018, 88-91.
Authors:  Wang X.S.;  Chan C.-H.;  Du J.;  Wong C.-H.;  Li Y.; et al.
Favorite | TC[WOS]:3 TC[Scopus]:2 | Submit date：2019/02/14