A 124-152 GHz > 15-dBm Psat28-nm CMOS PA Using Chebyshev Artificial-Transmission-Line-Based Matching for Wideband Power Splitting and Combining

doi:10.1109/RFIC54546.2022.9863134

UM > THE STATE KEY LABORATORY OF ANALOG AND MIXED-SIGNAL VLSI (UNIVERSITY OF MACAU)

Residential College	false
Status	已發表Published
	A 124-152 GHz > 15-dBm Psat28-nm CMOS PA Using Chebyshev Artificial-Transmission-Line-Based Matching for Wideband Power Splitting and Combining
	Jincheng Zhang 1; Tianxiang Wu 1; Yong Chen2 ; Junyan Ren 1; Shunli Ma 1
	2022-08
Conference Name	2022 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2022
Source Publication	Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
Volume	2022-June
Pages	187-190
Conference Date	9-21 June 2022
Conference Place	Denver, CO, USA
Abstract	This paper presents a 124-152 GHz power amplifier (PA) with >15 dBm saturation output power (Psat) in a 28-nm CMOS process. Low-coupling transformer-based fourth-order matching networks are used to extend the bandwidth (BW) with low insertion loss and compact area. A four-way Chebyshev-type artificial-transmission-line-based power combiner is proposed to further improve the output power without sacrificing BW. The measurement results show that this P A can achieve a peak gain of 22.6 dB with 28 GHz 3-dB BW. The in-band Psat is >15 dBm with a maximum output power of 16.2 dBm at 135 GHz. The total area of the chip is 0.66 × 0.73 mm2 •
Keyword	Cmos d Band Power Amplifier (p a) Power Combining Wideband
DOI	10.1109/RFIC54546.2022.9863134
URL	View the original
Indexed By	CPCI-S
Language	英語English
WOS Research Area	Engineering ; Telecommunications
WOS Subject	Engineering, Electrical & Electronic ; Telecommunications
WOS ID	WOS:000861182800047
Scopus ID	2-s2.0-85137682567
Fulltext Access	View Full-Text via DOI View Full-Text via Web of Science View Full-Text via Scopus
Citation statistics
Document Type	Conference paper
Collection	THE STATE KEY LABORATORY OF ANALOG AND MIXED-SIGNAL VLSI (UNIVERSITY OF MACAU) INSTITUTE OF MICROELECTRONICS
Corresponding Author	Junyan Ren
Affiliation	1.State Key Laboratory of ASIC & System, Fudan University, China 2.State-Key Laboratory of Analog & Mixed-Signal VLSI, IME/ECE-FST, University of Macau, China
Recommended Citation GB/T 7714	Jincheng Zhang,Tianxiang Wu,Yong Chen,et al. A 124-152 GHz > 15-dBm Psat28-nm CMOS PA Using Chebyshev Artificial-Transmission-Line-Based Matching for Wideband Power Splitting and Combining[C], 2022, 187-190.
APA	Jincheng Zhang., Tianxiang Wu., Yong Chen., Junyan Ren., & Shunli Ma (2022). A 124-152 GHz > 15-dBm Psat28-nm CMOS PA Using Chebyshev Artificial-Transmission-Line-Based Matching for Wideband Power Splitting and Combining. Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium, 2022-June, 187-190.

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